페이지 5 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 193W E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고3,952	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
NE68130-T1-R34-A	CEL	SAME AS 2SC4227 NPN SILICON AMPL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고3,536	10V	7GHz	1.4dB @ 1GHz	9dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2SC5455-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고3,194,964	6V	12GHz	1.5dB @ 2GHz	10dB	200mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC4703-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고346,092	12V	6GHz	2.3dB @ 1GHz	8.3dB	1.8W	50 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC5008-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고479,244	10V	8GHz	1.9dB @ 2GHz	7.5dB	125mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
NE46234-T1-SE-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고3,504	12V	6GHz	2.3dB @ 1GHz	8.3dB	1.8W	125 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC3932GSL	Panasonic Electronic Components	TRANS NPN 20VCEO 50MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고7,392	20V	1.6GHz	-	20dB	150mW	25 @ 2mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
HFA3128RZ96	Intersil	IC TRANSISTOR ARRAY PNP 16-QFN Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	패키지: 16-VFQFN Exposed Pad	재고3,216	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
AT-41586-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고278,376	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-42086-BLKG	Broadcom Limited	TRANS NPN BIPO 12V 80MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz Gain: 9dB ~ 13dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고3,424	12V	8GHz	1.9dB ~ 3.5dB @ 2GHz ~ 4GHz	9dB ~ 13dB	500mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
NE677M04-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 16dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고5,392	6V	15GHz	1.7dB @ 2GHz	16dB	205mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
MX0912B351Y,114	Ampleon USA Inc.	TRANSISTOR POWER NPN SOT439A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 960W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 21A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-439A Supplier Device Package: CDFM2	패키지: SOT-439A	재고5,440	20V	1.215GHz	-	7.6dB	960W	-	21A	200°C (TJ)	Surface Mount	SOT-439A	CDFM2
BFS505,115	NXP	TRANS NPN 15V 9GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고3,840	15V	9GHz	1.2dB ~ 2.1dB @ 900MHz	-	150mW	60 @ 5mA, 6V	18mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFG505/X,215	NXP	TRANS RF NPN 9GHZ 15V SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고3,264	15V	9GHz	1.2dB ~ 1.9dB @ 900MHz ~ 2GHz	-	150mW	60 @ 5mA, 6V	18mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFG92A/X,215	NXP	TRANS NPN 15V 25MA 5GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고6,768	15V	5GHz	2dB ~ 3dB @ 1GHz ~ 2GHz	-	400mW	65 @ 15mA, 10V	25mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFP640FESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 50MA 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz Gain: 8B ~ 30.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고3,632	4.7V	46GHz	0.55dB ~ 1.7dB @ 150MHz ~ 10GHz	8B ~ 30.5dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
MAPR-002729-170M00	M/A-Com Technology Solutions	170W 2.7-3.1 GHZ 100US/10% Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.11dB ~ 9.69dB Power - Max: 170W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 27A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고3,232	65V	-	-	9.11dB ~ 9.69dB	170W	-	27A	200°C (TJ)	Chassis Mount	-	-
UMIL100A	Microsemi Corporation	TRANS RF BIPO 270W 20A 55JU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7.2dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JU Supplier Device Package: 55JU	패키지: 55JU	재고2,752	31V	225MHz ~ 400MHz	-	7.2dB ~ 8.5dB	270W	10 @ 1A, 5V	20A	150°C (TJ)	Chassis Mount	55JU	55JU
2304	Microsemi Corporation	TRANS BIPO 20V 4W 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 10.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	패키지: 55BT	재고813,336	45V	2.3GHz	-	8dB	10.2W	10 @ 300mA, 5V	600mA	200°C (TJ)	Chassis Mount	55BT	55BT
MS1001	Microsemi Corporation	TRANS RF BIPO 270W 20A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고5,424	18V	30MHz	-	13dB	270W	20 @ 5A, 5V	20A	200°C (TJ)	Chassis Mount	M174	M174
2SC4626JCL	Panasonic Electronic Components	TRANS NPN 20VCEO 30MA SSMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	패키지: SC-89, SOT-490	재고2,576	20V	250MHz	2.8dB ~ 4dB @ 5MHz	-	125mW	110 @ 1mA, 10V	30mA	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
MMBTH10-TP	Micro Commercial Co	TRANS RF NPN 650MHZ 25V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고71,088	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFP840ESDH6327XTSA1	Infineon Technologies	IC TRANSISTOR RF NPN SOT343-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.25V Frequency - Transition: 80GHz Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz Gain: 18.5dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고27,642	2.25V	80GHz	0.85dB @ 5.5GHz	18.5dB	75mW	150 @ 10mA, 1.8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NTE108-1	NTE Electronics, Inc	RF TRANS NPN 15V 600MHZ TO106 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	패키지: -	Request a Quote	15V	600MHz	6dB @ 60MHz	15dB	625mW	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-106-3 Domed	TO-106
2SC4901YK-TR-E	Renesas	2SC4731 - BIPOLAR NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 900MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-CMPAK	패키지: -	Request a Quote	9V	9GHz	1.2dB @ 900MHz	-	100mW	50 @ 20mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-CMPAK
NSVF5501SKT3G	onsemi	RF-TR 10V 70MA FT=5.5GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Gain: 11dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623/SSFP	패키지: -	재고21,624	10V	5.5GHz	1.9dB @ 1GHz	11dB	250mW	100 @ 10mA, 5V	70mA	-55°C ~ 150°C (TJ)	Surface Mount	SOT-623F	SOT-623/SSFP
2SC2735JTL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 6.5dB @ 200MHz Gain: 21dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	패키지: -	Request a Quote	20V	1.2GHz	6.5dB @ 200MHz	21dB	150mW	40 @ 10mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
2SC4260TI-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFR 193W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고3,952

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

NE68130-T1-R34-A

CEL

SAME AS 2SC4227 NPN SILICON AMPL

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고3,536

10V

7GHz

1.4dB @ 1GHz

9dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2SC5455-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고3,194,964

6V

12GHz

1.5dB @ 2GHz

10dB

200mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC4703-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Gain: 8.3dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고346,092

12V

6GHz

2.3dB @ 1GHz

8.3dB

1.8W

50 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC5008-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고479,244

10V

8GHz

1.9dB @ 2GHz

7.5dB

125mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

NE46234-T1-SE-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Gain: 8.3dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고3,504

12V

6GHz

2.3dB @ 1GHz

8.3dB

1.8W

125 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC3932GSL

Panasonic Electronic Components

TRANS NPN 20VCEO 50MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고7,392

20V

1.6GHz

-

20dB

150mW

25 @ 2mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

HFA3128RZ96

Intersil

IC TRANSISTOR ARRAY PNP 16-QFN

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

패키지: 16-VFQFN Exposed Pad

재고3,216

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

AT-41586-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 8dB ~ 17dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고278,376

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

8dB ~ 17dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

AT-42086-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
Gain: 9dB ~ 13dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고3,424

12V

8GHz

1.9dB ~ 3.5dB @ 2GHz ~ 4GHz

9dB ~ 13dB

500mW

30 @ 35mA, 8V

80mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

NE677M04-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 16dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고5,392

6V

15GHz

1.7dB @ 2GHz

16dB

205mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SOT-343F

MX0912B351Y,114

Ampleon USA Inc.

TRANSISTOR POWER NPN SOT439A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB
Power - Max: 960W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 21A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-439A
Supplier Device Package: CDFM2

패키지: SOT-439A

재고5,440

20V

1.215GHz

-

7.6dB

960W

-

21A

200°C (TJ)

Surface Mount

SOT-439A

CDFM2

BFS505,115

NXP

TRANS NPN 15V 9GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고3,840

15V

9GHz

1.2dB ~ 2.1dB @ 900MHz

-

150mW

60 @ 5mA, 6V

18mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFG505/X,215

NXP

TRANS RF NPN 9GHZ 15V SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고3,264

15V

9GHz

1.2dB ~ 1.9dB @ 900MHz ~ 2GHz

-

150mW

60 @ 5mA, 6V

18mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFG92A/X,215

NXP

TRANS NPN 15V 25MA 5GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고6,768

15V

5GHz

2dB ~ 3dB @ 1GHz ~ 2GHz

-

400mW

65 @ 15mA, 10V

25mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFP640FESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 50MA 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain: 8B ~ 30.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고3,632

4.7V

46GHz

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

8B ~ 30.5dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

MAPR-002729-170M00

M/A-Com Technology Solutions

170W 2.7-3.1 GHZ 100US/10%

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.11dB ~ 9.69dB
Power - Max: 170W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 27A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,232

65V

-

9.11dB ~ 9.69dB

170W

-

27A

200°C (TJ)

Chassis Mount

-

UMIL100A

Microsemi Corporation

TRANS RF BIPO 270W 20A 55JU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 31V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 7.2dB ~ 8.5dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JU
Supplier Device Package: 55JU

패키지: 55JU

재고2,752

31V

225MHz ~ 400MHz

-

7.2dB ~ 8.5dB

270W

10 @ 1A, 5V

20A

150°C (TJ)

Chassis Mount

55JU

2304

Microsemi Corporation

TRANS BIPO 20V 4W 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 10.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

패키지: 55BT

재고813,336

45V

2.3GHz

-

8dB

10.2W

10 @ 300mA, 5V

600mA

200°C (TJ)

Chassis Mount

55BT

MS1001

Microsemi Corporation

TRANS RF BIPO 270W 20A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고5,424

18V

30MHz

-

13dB

270W

20 @ 5A, 5V

20A

200°C (TJ)

Chassis Mount

M174

2SC4626JCL

Panasonic Electronic Components

TRANS NPN 20VCEO 30MA SSMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

패키지: SC-89, SOT-490

재고2,576

20V

250MHz

2.8dB ~ 4dB @ 5MHz

-

125mW

110 @ 1mA, 10V

30mA

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

MMBTH10-TP

Micro Commercial Co

TRANS RF NPN 650MHZ 25V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고71,088

25V

650MHz

-

225mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFP840ESDH6327XTSA1

Infineon Technologies

IC TRANSISTOR RF NPN SOT343-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.25V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Gain: 18.5dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고27,642

2.25V

80GHz

0.85dB @ 5.5GHz

18.5dB

75mW

150 @ 10mA, 1.8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NTE108-1

NTE Electronics, Inc

RF TRANS NPN 15V 600MHZ TO106

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-106-3 Domed
Supplier Device Package: TO-106

패키지: -

Request a Quote

15V

600MHz

6dB @ 60MHz

15dB

625mW

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-106-3 Domed

TO-106

2SC4901YK-TR-E

Renesas

2SC4731 - BIPOLAR NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 900MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-CMPAK

패키지: -

Request a Quote

9V

9GHz

1.2dB @ 900MHz

-

100mW

50 @ 20mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-CMPAK

NSVF5501SKT3G

onsemi

RF-TR 10V 70MA FT=5.5GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 11dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: SOT-623/SSFP

패키지: -

재고21,624

10V

5.5GHz

1.9dB @ 1GHz

11dB

250mW

100 @ 10mA, 5V

70mA

-55°C ~ 150°C (TJ)

Surface Mount

SOT-623F

SOT-623/SSFP

2SC2735JTL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
Gain: 21dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

패키지: -

Request a Quote

20V

1.2GHz

6.5dB @ 200MHz

21dB

150mW

40 @ 10mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

2SC4260TI-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-