페이지 6 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFS 17P E6433	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,552	15V	1.4GHz	3.5dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
MRF4427R1	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-dBGA (2x1.5)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,488	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-dBGA (2x1.5)
MS2393	Microsemi Corporation	TRANS RF BIPO 87.5W 11A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	패키지: M138	재고3,104	65V	1.025GHz ~ 1.15GHz	-	8.2dB	583W	5 @ 300mA, 5V	11A	200°C (TJ)	Chassis Mount	M138	M138
MS2213	Microsemi Corporation	TRANS RF BIPO 75W 3.5A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 3.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	패키지: M214	재고4,544	55V	960MHz ~ 1.215GHz	-	7.8dB	75W	15 @ 1A, 5V	3.5A	250°C (TJ)	Chassis Mount	M214	M214
MAX2602ESA-T	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고5,680	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
NE68133-T1B-R34-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,440	10V	9GHz	1.2dB @ 1GHz	13dB	200mW	80 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE685M33-T3-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고6,336	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	130mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE68019-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.6dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고2,112	10V	10GHz	1.9dB @ 2GHz	9.6dB	100mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
SD1488	STMicroelectronics	TRANSISTOR NPN RF BIPO VHF 6LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 5.8dB Power - Max: 117W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	패키지: M111	재고4,192	16V	-	-	5.8dB	117W	20 @ 1A, 5V	8A	200°C (TJ)	Surface Mount	M111	M111
SD1446	STMicroelectronics	TRANSISTOR NPN RF BIPO UHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 183W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고5,728	18V	-	-	10dB	183W	10 @ 5A, 5V	12A	200°C (TJ)	Surface Mount	M113	M113
HFA3127B	Intersil	IC TRANSISTOR ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고46,236	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
NE85633-T1B	CEL	TRANS NPN 1GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,216	12V	7GHz	1.4dB ~ 2dB @ 1GHz	9dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
UTV080	Microsemi Corporation	TRANS RF BIPO 65W 2.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Channel, DIN Rail Mount Package / Case: 55JV Supplier Device Package: 55JV	패키지: 55JV	재고7,824	28V	470MHz ~ 860MHz	-	9dB ~ 10dB	65W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Channel, DIN Rail Mount	55JV	55JV
MS3022	Microsemi Corporation	TRANS RF BIPO 7W 200MA M210 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1GHz ~ 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M210 Supplier Device Package: M210	패키지: M210	재고2,288	45V	1GHz ~ 2GHz	-	7dB	7W	15 @ 100mA, 5V	200mA	200°C (TJ)	Chassis Mount	M210	M210
BFG520,235	NXP	TRANS RF NPN 9GHZ 15V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고7,104	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
2SC5347AF-TD-E	ON Semiconductor	TRANS NPN BIPO HI FREQ PCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 8dB Power - Max: 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: TO-243AA	재고2,032	12V	4.7GHz	1.8dB @ 1GHz	8dB	1.3W	135 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
MCH4016-TL-H	ON Semiconductor	TRANS NPN 12V 30MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 18dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	패키지: 4-SMD, Flat Leads	재고4,160	12V	10GHz	1.2dB @ 1GHz	18dB	350mW	60 @ 5mA, 5V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
MCH4015-TL-H	ON Semiconductor	TRANS NPN 12V 100MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	패키지: 4-SMD, Flat Leads	재고6,608	12V	10GHz	1.2dB @ 1GHz	17dB	450mW	60 @ 50mA, 5V	100mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고180,000	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
ZUMTS17NTA	Diodes Incorporated	TRANS RF 3.2GHZ 11V SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 11V Frequency - Transition: 3.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고2,340,000	11V	3.2GHz	-	-	330mW	56 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFR93AWH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 90MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 15.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고117,048	12V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	10.5dB ~ 15.5dB	300mW	70 @ 30mA, 8V	90mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BFU520WX	NXP	TRANS RF NPN 12V 30MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.6dB @ 900MHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고249,498	12V	10GHz	0.6dB @ 900MHz	18.5dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFR949L3E6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	패키지: -	Request a Quote	10V	9GHz	1dB ~ 2.5dB @ 1GHz	21.5dB	250mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
PH8906	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PH1214-55EL	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,55W,28V,1.20- Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 58V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): - Gain: 6.6dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	패키지: -	Request a Quote	58V	1.4GHz	-	6.6dB	220W	-	7A	200°C	Chassis Mount	2L-FLG	-
SD1015	Microsemi Corporation	RF TRANS NPN 18V 150MHZ M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C Mounting Type: Stud Mount Package / Case: M135 Supplier Device Package: M135	패키지: -	Request a Quote	18V	150MHz	-	10dB	10W	35 @ 200mA, 5V	1A	200°C	Stud Mount	M135	M135
MMBT918_R1_00001	Panjit International Inc.	VHF/UHF NPN SILICON TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고8,802	15V	600MHz	-	-	225mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MX0912B351Y	Ampleon USA Inc.	RF POWER BIPOLAR TRANSISTOR, 1-E Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 960W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 21A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-439A Supplier Device Package: CDFM2	패키지: -	Request a Quote	20V	1.215GHz	-	8dB	960W	-	21A	200°C (TJ)	Chassis Mount	SOT-439A	CDFM2

BFS 17P E6433

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,552

15V

1.4GHz

3.5dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

MRF4427R1

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-dBGA (2x1.5)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,488

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-dBGA (2x1.5)

MS2393

Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
Current - Collector (Ic) (Max): 11A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

패키지: M138

재고3,104

65V

1.025GHz ~ 1.15GHz

-

8.2dB

583W

5 @ 300mA, 5V

11A

200°C (TJ)

Chassis Mount

M138

MS2213

Microsemi Corporation

TRANS RF BIPO 75W 3.5A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB
Power - Max: 75W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 3.5A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

패키지: M214

재고4,544

55V

960MHz ~ 1.215GHz

-

7.8dB

75W

15 @ 1A, 5V

3.5A

250°C (TJ)

Chassis Mount

M214

MAX2602ESA-T

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고5,680

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

NE68133-T1B-R34-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,440

10V

9GHz

1.2dB @ 1GHz

13dB

200mW

80 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE685M33-T3-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고6,336

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

130mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE68019-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.6dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고2,112

10V

10GHz

1.9dB @ 2GHz

9.6dB

100mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

SD1488

STMicroelectronics

TRANSISTOR NPN RF BIPO VHF 6LEAD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 5.8dB
Power - Max: 117W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M111
Supplier Device Package: M111

패키지: M111

재고4,192

16V

-

5.8dB

117W

20 @ 1A, 5V

8A

200°C (TJ)

Surface Mount

M111

SD1446

STMicroelectronics

TRANSISTOR NPN RF BIPO UHF M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 183W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고5,728

18V

-

10dB

183W

10 @ 5A, 5V

12A

200°C (TJ)

Surface Mount

M113

HFA3127B

Intersil

IC TRANSISTOR ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고46,236

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

NE85633-T1B

CEL

TRANS NPN 1GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,216

12V

7GHz

1.4dB ~ 2dB @ 1GHz

9dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

UTV080

Microsemi Corporation

TRANS RF BIPO 65W 2.5A 55JV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 28V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 10dB
Power - Max: 65W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Channel, DIN Rail Mount
Package / Case: 55JV
Supplier Device Package: 55JV

패키지: 55JV

재고7,824

28V

470MHz ~ 860MHz

-

9dB ~ 10dB

65W

10 @ 500mA, 5V

2.5A

200°C (TJ)

Channel, DIN Rail Mount

55JV

MS3022

Microsemi Corporation

TRANS RF BIPO 7W 200MA M210

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1GHz ~ 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M210
Supplier Device Package: M210

패키지: M210

재고2,288

45V

1GHz ~ 2GHz

-

7dB

7W

15 @ 100mA, 5V

200mA

200°C (TJ)

Chassis Mount

M210

BFG520,235

NXP

TRANS RF NPN 9GHZ 15V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고7,104

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

2SC5347AF-TD-E

ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 8dB
Power - Max: 1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: TO-243AA

재고2,032

12V

4.7GHz

1.8dB @ 1GHz

8dB

1.3W

135 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

MCH4016-TL-H

ON Semiconductor

TRANS NPN 12V 30MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 18dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

패키지: 4-SMD, Flat Leads

재고4,160

12V

10GHz

1.2dB @ 1GHz

18dB

350mW

60 @ 5mA, 5V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

MCH4015-TL-H

ON Semiconductor

TRANS NPN 12V 100MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

패키지: 4-SMD, Flat Leads

재고6,608

12V

10GHz

1.2dB @ 1GHz

17dB

450mW

60 @ 50mA, 5V

100mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

2SC5065-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고180,000

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

ZUMTS17NTA

Diodes Incorporated

TRANS RF 3.2GHZ 11V SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 11V
Frequency - Transition: 3.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고2,340,000

11V

3.2GHz

-

330mW

56 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFR93AWH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 90MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고117,048

12V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

10.5dB ~ 15.5dB

300mW

70 @ 30mA, 8V

90mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BFU520WX

NXP

TRANS RF NPN 12V 30MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고249,498

12V

10GHz

0.6dB @ 900MHz

18.5dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFR949L3E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

패키지: -

Request a Quote

10V

9GHz

1dB ~ 2.5dB @ 1GHz

21.5dB

250mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

PH8906

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PH1214-55EL

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,55W,28V,1.20-

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 58V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 6.6dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

패키지: -

Request a Quote

58V

1.4GHz

-

6.6dB

220W

-

7A

200°C

Chassis Mount

2L-FLG

-

SD1015

Microsemi Corporation

RF TRANS NPN 18V 150MHZ M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C
Mounting Type: Stud Mount
Package / Case: M135
Supplier Device Package: M135

패키지: -

Request a Quote

18V

150MHz

-

10dB

10W

35 @ 200mA, 5V

1A

200°C

Stud Mount

M135

MMBT918_R1_00001

Panjit International Inc.

VHF/UHF NPN SILICON TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고8,802

15V

600MHz

-

225mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MX0912B351Y

Ampleon USA Inc.

RF POWER BIPOLAR TRANSISTOR, 1-E

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 960W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 21A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-439A
Supplier Device Package: CDFM2

패키지: -

Request a Quote

20V

1.215GHz

-

8dB

960W

-

21A

200°C (TJ)

Chassis Mount

SOT-439A

CDFM2