페이지 44 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 640 H6433	Infineon Technologies	TRANS RF NPN 4V 50MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고2,656	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	24dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP196WE6327HTSA1	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고6,416	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP540E6327BTSA1	Infineon Technologies	TRANSISTOR RF NPN 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고3,504	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	21.5dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MRF8372	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,496	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NE202930-T1-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.15dB @ 1GHz Gain: 13.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고2,000	6V	11GHz	1.15dB @ 1GHz	13.5dB	150mW	85 @ 5mA, 5V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
MRF517	Microsemi Corporation	TRANS RF BIPO 2.5W 150MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고7,680	20V	4GHz	-	9dB ~ 10dB	2.5W	50 @ 60mA, 10V	150mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1013-03	Microsemi Corporation	TRANS RF BIPO 13W 1A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고6,240	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M113	M113
UTV020	Microsemi Corporation	TRANS RF BIPO 17W 1.2A 55FT-6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 17W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	패키지: 55FT	재고3,360	25V	470MHz ~ 860MHz	-	12dB	17W	10 @ 250mA, 5V	1.2A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
AT-42000-GP4	Broadcom Limited	TRANSISTOR NPN BIPOLAR CHIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10.5dB ~ 14dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip	패키지: Die	재고6,048	12V	9GHz	1.9dB ~ 3dB @ 2GHz ~ 4GHz	10.5dB ~ 14dB	600mW	30 @ 35mA, 8V	80mA	200°C (TJ)	Surface Mount	Die	Chip
NE677M04-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 16dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고2,528	6V	15GHz	1.7dB @ 2GHz	16dB	205mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
KSC2786YBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body	재고4,752	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
ZTX325STOB	Diodes Incorporated	TRANSISTOR RF NPN E-LINE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 5dB @ 500MHz Gain: 53dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고2,176	15V	1.3GHz	5dB @ 500MHz	53dB	350mW	25 @ 2mA, 1V	50mA	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
NE68033-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,520	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC24040CL	Panasonic Electronic Components	TRANS NPN 20VCEO 15MA MINI-3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고33,840	20V	650MHz	3.3dB @ 100MHz	24dB	150mW	65 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
NE46134-T1	CEL	TRANS NPN 1GHZ SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: - Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고3,344	15V	5.5GHz	1.5dB ~ 2dB @ 500MHz ~ 1GHz	-	2W	40 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
1214-150L	Microsemi Corporation	TRANS BIPO 55ST-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.15dB ~ 8.7dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST-1 Supplier Device Package: 55ST-1	패키지: 55ST-1	재고6,992	65V	1.2GHz ~ 1.4GHz	-	7.15dB ~ 8.7dB	320W	20 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55ST-1	55ST-1
MS2421	Microsemi Corporation	TRANS RF BIPO 875W 22A M103 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M103 Supplier Device Package: M103	패키지: M103	재고7,232	65V	1.025GHz ~ 1.15GHz	-	6.3dB	875W	10 @ 500mA, 5V	22A	200°C (TJ)	Chassis Mount	M103	M103
1014-12	Microsemi Corporation	TRANS RF BIPO 39W 5A 55LT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 6.8dB Power - Max: 39W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	패키지: 55LT	재고7,008	50V	1GHz ~ 1.4GHz	-	6.8dB	39W	10 @ 200mA, 5V	5A	200°C (TJ)	Chassis Mount	55LT	55LT
MS1509	Microsemi Corporation	TRANS RF BIPO 260W 15A M168 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 5.5dBi Power - Max: 260W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M168 Supplier Device Package: M168	패키지: M168	재고4,848	33V	500MHz	-	5.5dBi	260W	20 @ 1mA, 5V	15A	200°C (TJ)	Chassis Mount	M168	M168
BFU530XRVL	NXP	TRANS RF NPN 12V 40MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 16.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고5,728	12V	11GHz	1.1dB @ 1.8GHz	16.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
MRF10150	M/A-Com Technology Solutions	TRANS NPN 150W 1025MHZ-1050MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 14A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 376B-02 Supplier Device Package: 376B-02, Style 1	패키지: 376B-02	재고6,576	65V	-	-	10dB	150W	20 @ 5A, 5V	14A	200°C (TJ)	Chassis Mount	376B-02	376B-02, Style 1
MT3S20TU(TE85L)	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA UFM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V Gain: 12dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	패키지: 3-SMD, Flat Leads	재고7,936	12V	7GHz	1.45dB @ 20mA, 5V	12dB	900mW	100 @ 50mA, 5V	80mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	UFM
BFU530R	NXP	TRANS RF NPN 12V 40MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.6dB @ 900MHz Gain: 21.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고7,376	12V	11GHz	0.6dB @ 900MHz	21.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFS17WH6327XTSA1	Infineon Technologies	TRANS RF NPN 15V 25MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고90,588	15V	1.4GHz	3.5dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
PH2729-65M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,65W,36V,2.70- Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	65V	2.7GHz ~ 2.9GHz	-	8.5dB	330W	-	8A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MRF5812M	Microsemi Corporation	TRANS NPN 15V 200MA Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2735JTR-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 6.5dB @ 200MHz Gain: 21dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	패키지: -	Request a Quote	20V	1.2GHz	6.5dB @ 200MHz	21dB	150mW	40 @ 10mA, 10V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
BFP196WH6740	Infineon Technologies	RF TRANSISTOR, L BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4-1	패키지: -	Request a Quote	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4-1

BFP 640 H6433

Infineon Technologies

TRANS RF NPN 4V 50MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 24dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고2,656

4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

24dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP196WE6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고6,416

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

12.5dB ~ 19dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP540E6327BTSA1

Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고3,504

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

21.5dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MRF8372

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,496

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NE202930-T1-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1GHz
Gain: 13.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고2,000

6V

11GHz

1.15dB @ 1GHz

13.5dB

150mW

85 @ 5mA, 5V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

MRF517

Microsemi Corporation

TRANS RF BIPO 2.5W 150MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 10dB
Power - Max: 2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고7,680

20V

4GHz

-

9dB ~ 10dB

2.5W

50 @ 60mA, 10V

150mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SD1013-03

Microsemi Corporation

TRANS RF BIPO 13W 1A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고6,240

35V

150MHz

-

10dB

13W

10 @ 200mA, 5V

1A

200°C (TJ)

Chassis Mount

M113

UTV020

Microsemi Corporation

TRANS RF BIPO 17W 1.2A 55FT-6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 17W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

패키지: 55FT

재고3,360

25V

470MHz ~ 860MHz

-

12dB

17W

10 @ 250mA, 5V

1.2A

200°C (TJ)

Chassis, Stud Mount

55FT

AT-42000-GP4

Broadcom Limited

TRANSISTOR NPN BIPOLAR CHIP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10.5dB ~ 14dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Chip

패키지: Die

재고6,048

12V

9GHz

1.9dB ~ 3dB @ 2GHz ~ 4GHz

10.5dB ~ 14dB

600mW

30 @ 35mA, 8V

80mA

200°C (TJ)

Surface Mount

Die

Chip

NE677M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 16dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고2,528

6V

15GHz

1.7dB @ 2GHz

16dB

205mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SOT-343F

KSC2786YBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body

재고4,752

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

ZTX325STOB

Diodes Incorporated

TRANSISTOR RF NPN E-LINE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 5dB @ 500MHz
Gain: 53dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고2,176

15V

1.3GHz

5dB @ 500MHz

53dB

350mW

25 @ 2mA, 1V

50mA

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

NE68033-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,520

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC24040CL

Panasonic Electronic Components

TRANS NPN 20VCEO 15MA MINI-3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고33,840

20V

650MHz

3.3dB @ 100MHz

24dB

150mW

65 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

NE46134-T1

CEL

TRANS NPN 1GHZ SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고3,344

15V

5.5GHz

1.5dB ~ 2dB @ 500MHz ~ 1GHz

-

2W

40 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

1214-150L

Microsemi Corporation

TRANS BIPO 55ST-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.15dB ~ 8.7dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1

패키지: 55ST-1

재고6,992

65V

1.2GHz ~ 1.4GHz

-

7.15dB ~ 8.7dB

320W

20 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55ST-1

MS2421

Microsemi Corporation

TRANS RF BIPO 875W 22A M103

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.3dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M103
Supplier Device Package: M103

패키지: M103

재고7,232

65V

1.025GHz ~ 1.15GHz

-

6.3dB

875W

10 @ 500mA, 5V

22A

200°C (TJ)

Chassis Mount

M103

1014-12

Microsemi Corporation

TRANS RF BIPO 39W 5A 55LT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 6.8dB
Power - Max: 39W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT

패키지: 55LT

재고7,008

50V

1GHz ~ 1.4GHz

-

6.8dB

39W

10 @ 200mA, 5V

5A

200°C (TJ)

Chassis Mount

55LT

MS1509

Microsemi Corporation

TRANS RF BIPO 260W 15A M168

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 5.5dBi
Power - Max: 260W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M168
Supplier Device Package: M168

패키지: M168

재고4,848

33V

500MHz

-

5.5dBi

260W

20 @ 1mA, 5V

15A

200°C (TJ)

Chassis Mount

M168

BFU530XRVL

NXP

TRANS RF NPN 12V 40MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 16.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고5,728

12V

11GHz

1.1dB @ 1.8GHz

16.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-143R

MRF10150

M/A-Com Technology Solutions

TRANS NPN 150W 1025MHZ-1050MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 14A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 376B-02
Supplier Device Package: 376B-02, Style 1

패키지: 376B-02

재고6,576

65V

-

10dB

150W

20 @ 5A, 5V

14A

200°C (TJ)

Chassis Mount

376B-02

376B-02, Style 1

MT3S20TU(TE85L)

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA UFM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V
Gain: 12dB
Power - Max: 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: UFM

패키지: 3-SMD, Flat Leads

재고7,936

12V

7GHz

1.45dB @ 20mA, 5V

12dB

900mW

100 @ 50mA, 5V

80mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

UFM

BFU530R

NXP

TRANS RF NPN 12V 40MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 21.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고7,376

12V

11GHz

0.6dB @ 900MHz

21.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFS17WH6327XTSA1

Infineon Technologies

TRANS RF NPN 15V 25MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고90,588

15V

1.4GHz

3.5dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

PH2729-65M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,65W,36V,2.70-

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

65V

2.7GHz ~ 2.9GHz

-

8.5dB

330W

-

8A

200°C (TJ)

Chassis Mount

2L-FLG

MRF5812M

Microsemi Corporation

TRANS NPN 15V 200MA

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC2735JTR-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
Gain: 21dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

패키지: -

Request a Quote

20V

1.2GHz

6.5dB @ 200MHz

21dB

150mW

40 @ 10mA, 10V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

BFP196WH6740

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4-1

패키지: -

Request a Quote

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

19dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4-1