페이지 46 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFG 196 E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 9dB ~ 14.5dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고5,168	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	9dB ~ 14.5dB	800mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
BFP640FE6327	Infineon Technologies	TRANSISTOR NPN RF 4V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 23dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고4,976	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	23dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
2SC3356-T1B-R25-A	CEL	SAME AS NE85633 NPN SILICON AMPL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,448	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MS2204	Microsemi Corporation	TRANS RF BIPO 600MW 300MA M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고2,432	20V	1.09GHz	-	10.8dB	600mW	15 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M115	M115
MS2322	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고2,016	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	10 @ 100mA, 5V	1.5A	-	Chassis Mount	M115	M115
MS2211	Microsemi Corporation	TRANS RF BIPO 25W 900MA M222 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 48V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9.3dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 900mA Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	패키지: M222	재고14,544	48V	960MHz ~ 1.215GHz	-	9.3dB	25W	30 @ 250mA, 5V	900mA	250°C (TJ)	Chassis Mount	M222	M222
MRF553G	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11dB ~ 13dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	패키지: Power Macro	재고4,320	16V	175MHz	-	11dB ~ 13dB	3W	30 @ 250mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
MPSH17_D26Z	Fairchild/ON Semiconductor	TRANS NPN 15V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,872	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSH10_D26Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,464	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NESG2107M33-A	CEL	TRANS NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz Gain: 7dB ~ 10dB Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고3,008	5V	10GHz	0.9dB ~ 1.5dB @ 2GHz	7dB ~ 10dB	130mW	140 @ 5mA, 1V	100mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
KSC1393RBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,328	30V	700MHz	2dB ~ 3dB @ 200MHz	20dB ~ 24dB	250mW	40 @ 2mA, 10V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC1393YBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고1,188,000	30V	700MHz	2dB ~ 3dB @ 200MHz	20dB ~ 24dB	250mW	90 @ 2mA, 10V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE68130-T1-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고2,976	10V	7GHz	1.4dB @ 1GHz	9dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE68819-T1	CEL	TRANS NPN 2GHZ SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: 3-SuperMiniMold (19)	패키지: SOT-523	재고7,216	6V	5GHz	1.7dB ~ 2.5dB @ 2GHz	-	125mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	SOT-523	3-SuperMiniMold (19)
MZ0912B50Y,114	Ampleon USA Inc.	TRANSISTOR POWER NPN SOT443A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 3A Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-443A Supplier Device Package: CDFM2	패키지: SOT-443A	재고3,840	20V	1.215GHz	-	8dB	150W	-	3A	-	Surface Mount	SOT-443A	CDFM2
BFR505T,115	NXP	TRANS NPN 15V 9GHZ SOT-416 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	패키지: SC-75, SOT-416	재고3,440	15V	9GHz	1.2dB ~ 2.1dB @ 900MHz	-	150mW	60 @ 5mA, 6V	18mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
1214-32L	Microsemi Corporation	TRANS RF BIPO 125W 5A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB ~ 8.9dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	패키지: 55AW-1	재고6,304	50V	1.2GHz ~ 1.4GHz	-	7.8dB ~ 8.9dB	125W	20 @ 1A, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
UPA801T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고36,000	12V	4.5GHz	1.2dB @ 1GHz	9dB	200mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DSC9G02C0L	Panasonic Electronic Components	TRANS RF NPN 20V 15MA SSMINI3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	패키지: SC-89, SOT-490	재고4,512	20V	650MHz	3.3dB @ 100MHz	24dB	125mW	65 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
ZUMT918TA	Diodes Incorporated	TRANSISTOR NPN 15V 100MA SC70-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고216,000	15V	600MHz	6dB @ 60MHz	15dB	330mW	20 @ 3mA, 1V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFU550XRR	NXP	TRANS RF NPN 12V 50MA SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Gain: 21.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고3,296	12V	11GHz	0.7dB @ 900MHz	21.5dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB ~ 16.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고72,000	12V	7GHz	1.1dB @ 1GHz	11dB ~ 16.5dB	100mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12dB ~ 17dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고53,310	12V	7GHz	1.1dB @ 1GHz	12dB ~ 17dB	100mW	120 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
NE67818-A	CEL	RF TRANS NPN 6V 12GHZ SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	패키지: -	Request a Quote	6V	12GHz	1.7dB @ 2GHz	13dB	200mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	-
MRF313	MACOM Technology Solutions	TRANS RF NPN 30V 150MA 305A-01 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: 16dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 305A-01 Supplier Device Package: 305A-01, Style 1	패키지: -	Request a Quote	30V	2.5GHz	-	16dB	1W	20 @ 100mA, 10V	150mA	-	Chassis Mount	305A-01	305A-01, Style 1
2SC4227-A	CEL	RF TRANS NPN 10V 7GHZ SC70 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	Request a Quote	10V	7GHz	1.4dB @ 1GHz	12dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
BFP182WE6327	Infineon Technologies	RF TRANSISTOR, L BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: -	Request a Quote	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MSC1090M	Microsemi Corporation	RF TRANS 65V 1.15GHZ M220 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 5.52A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	패키지: -	Request a Quote	65V	1.025GHz ~ 1.15GHz	-	8.4dB	220W	15 @ 500mA, 5V	5.52A	200°C	Chassis Mount	M220	M220

BFG 196 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 9dB ~ 14.5dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고5,168

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

9dB ~ 14.5dB

800mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

BFP640FE6327

Infineon Technologies

TRANSISTOR NPN RF 4V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 23dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고4,976

4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

23dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

2SC3356-T1B-R25-A

CEL

SAME AS NE85633 NPN SILICON AMPL

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,448

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MS2204

Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고2,432

20V

1.09GHz

-

10.8dB

600mW

15 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

M115

MS2322

Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고2,016

65V

1.025GHz ~ 1.15GHz

-

10dB

87.5W

10 @ 100mA, 5V

1.5A

-

Chassis Mount

M115

MS2211

Microsemi Corporation

TRANS RF BIPO 25W 900MA M222

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 48V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9.3dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 900mA
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M222
Supplier Device Package: M222

패키지: M222

재고14,544

48V

960MHz ~ 1.215GHz

-

9.3dB

25W

30 @ 250mA, 5V

900mA

250°C (TJ)

Chassis Mount

M222

MRF553G

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 13dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

패키지: Power Macro

재고4,320

16V

175MHz

-

11dB ~ 13dB

3W

30 @ 250mA, 5V

500mA

-

Surface Mount

Power Macro

MPSH17_D26Z

Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,872

15V

800MHz

6dB @ 200MHz

24dB

350mW

25 @ 5mA, 10V

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSH10_D26Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,464

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NESG2107M33-A

CEL

TRANS NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
Gain: 7dB ~ 10dB
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고3,008

5V

10GHz

0.9dB ~ 1.5dB @ 2GHz

7dB ~ 10dB

130mW

140 @ 5mA, 1V

100mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

KSC1393RBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,328

30V

700MHz

2dB ~ 3dB @ 200MHz

20dB ~ 24dB

250mW

40 @ 2mA, 10V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC1393YBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고1,188,000

30V

700MHz

2dB ~ 3dB @ 200MHz

20dB ~ 24dB

250mW

90 @ 2mA, 10V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE68130-T1-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고2,976

10V

7GHz

1.4dB @ 1GHz

9dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE68819-T1

CEL

TRANS NPN 2GHZ SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: 3-SuperMiniMold (19)

패키지: SOT-523

재고7,216

6V

5GHz

1.7dB ~ 2.5dB @ 2GHz

-

125mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

SOT-523

3-SuperMiniMold (19)

MZ0912B50Y,114

Ampleon USA Inc.

TRANSISTOR POWER NPN SOT443A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 3A
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-443A
Supplier Device Package: CDFM2

패키지: SOT-443A

재고3,840

20V

1.215GHz

-

8dB

150W

-

3A

-

Surface Mount

SOT-443A

CDFM2

BFR505T,115

NXP

TRANS NPN 15V 9GHZ SOT-416

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

패키지: SC-75, SOT-416

재고3,440

15V

9GHz

1.2dB ~ 2.1dB @ 900MHz

-

150mW

60 @ 5mA, 6V

18mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

1214-32L

Microsemi Corporation

TRANS RF BIPO 125W 5A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB ~ 8.9dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

패키지: 55AW-1

재고6,304

50V

1.2GHz ~ 1.4GHz

-

7.8dB ~ 8.9dB

125W

20 @ 1A, 5V

5A

200°C (TJ)

Chassis Mount

55AW-1

UPA801T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고36,000

12V

4.5GHz

1.2dB @ 1GHz

9dB

200mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DSC9G02C0L

Panasonic Electronic Components

TRANS RF NPN 20V 15MA SSMINI3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

패키지: SC-89, SOT-490

재고4,512

20V

650MHz

3.3dB @ 100MHz

24dB

125mW

65 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

ZUMT918TA

Diodes Incorporated

TRANSISTOR NPN 15V 100MA SC70-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고216,000

15V

600MHz

6dB @ 60MHz

15dB

330mW

20 @ 3mA, 1V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFU550XRR

NXP

TRANS RF NPN 12V 50MA SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Gain: 21.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고3,296

12V

11GHz

0.7dB @ 900MHz

21.5dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-143R

2SC5085-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고72,000

12V

7GHz

1.1dB @ 1GHz

11dB ~ 16.5dB

100mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC5065-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 12dB ~ 17dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고53,310

12V

7GHz

1.1dB @ 1GHz

12dB ~ 17dB

100mW

120 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

NE67818-A

CEL

RF TRANS NPN 6V 12GHZ SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

패키지: -

Request a Quote

6V

12GHz

1.7dB @ 2GHz

13dB

200mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

-

MRF313

MACOM Technology Solutions

TRANS RF NPN 30V 150MA 305A-01

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 16dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 305A-01
Supplier Device Package: 305A-01, Style 1

패키지: -

Request a Quote

30V

2.5GHz

-

16dB

1W

20 @ 100mA, 10V

150mA

-

Chassis Mount

305A-01

305A-01, Style 1

2SC4227-A

CEL

RF TRANS NPN 10V 7GHZ SC70

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

Request a Quote

10V

7GHz

1.4dB @ 1GHz

12dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

BFP182WE6327

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: -

Request a Quote

12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MSC1090M

Microsemi Corporation

RF TRANS 65V 1.15GHZ M220

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Current - Collector (Ic) (Max): 5.52A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

패키지: -

Request a Quote

65V

1.025GHz ~ 1.15GHz

-

8.4dB

220W

15 @ 500mA, 5V

5.52A

200°C

Chassis Mount

M220