페이지 48 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 405 H6433	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고2,752	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFR 380F E6327	Infineon Technologies	TRANSISTOR RF NPN 6V TSFP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz Gain: 9.5dB ~ 13.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고4,944	9V	14GHz	1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz	9.5dB ~ 13.5dB	380mW	90 @ 40mA, 3V	80mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
BFP 196R E6327	Infineon Technologies	TRANS RF NPN 12V 150MA SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	패키지: TO-253-4, TO-253AA	재고3,232	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16.5dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
BFS 481 E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 20dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고3,056	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	20dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BFS 466L6 E6327	Infineon Technologies	TRANSISTOR RF TWIN NPN TSLP-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5V, 9V Frequency - Transition: 22GHz, 14GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz Gain: 12dB ~ 17dB Power - Max: 200mW, 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V Current - Collector (Ic) (Max): 50mA, 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: PG-TSLP-6	패키지: 6-XFDFN	재고6,800	5V, 9V	22GHz, 14GHz	1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz	12dB ~ 17dB	200mW, 210mW	90 @ 20mA, 3V / 90 @ 15mA, 3V	50mA, 35mA	150°C (TJ)	Surface Mount	6-XFDFN	PG-TSLP-6
BFR 380T E6327	Infineon Technologies	TRANSISTOR RF NPN 6V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고7,584	9V	14GHz	1.1dB @ 1.8GHz	12.5dB	380mW	60 @ 40mA, 3V	80mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
2SC5013-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고432,000	10V	10GHz	1.8dB @ 2GHz	9.5dB	150mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NE67839-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고5,440	6V	12GHz	1.5dB @ 2GHz	10dB	200mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC5606-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고1,116,000	3.3V	21GHz	1.2dB @ 2GHz	14dB	115mW	60 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
2SC5374A-TL-E	ON Semiconductor	TRANS NPN BIPO 100MA 10V SMCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 5.2GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 10.5dB @ 1GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	패키지: SC-75, SOT-416	재고132,000	10V	5.2GHz	1.4dB @ 1GHz	10.5dB @ 1GHz	100mW	110 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SMCP
NE856M02-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고2,496	12V	6.5GHz	1.1dB @ 1GHz	12dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BFR93AW,115	NXP	TRANS NPN 12V 35MA 5GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고7,856	12V	5GHz	1.5dB ~ 2.1dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BF240_J35Z	Fairchild/ON Semiconductor	TRANS RF NPN 40V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,304	40V	1.1GHz	-	-	350mW	65 @ 1mA, 10V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MBC13900NT1	NXP	TRANS RF NPN LO NOISE SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.5V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz Gain: 15dB ~ 22dB Power - Max: 188mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고4,192	6.5V	15GHz	0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz	15dB ~ 22dB	188mW	100 @ 5mA, 2V	20mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NE68833-T1-A	CEL	TRANS NPN 2GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고55,080	6V	4.5GHz	1.7dB ~ 2.5dB @ 2GHz	-	200mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE687M33-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 2GHz Gain: - Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	패키지: 3-SMD, Flat Leads	재고3,760	3V	12GHz	1.5dB ~ 2dB @ 2GHz	-	90mW	70 @ 10mA, 1V	30mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE685M13-A	CEL	TRANSISTOR NPN 2GHZ M13 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 140mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-3 Supplier Device Package: M13	패키지: SOT-3	재고4,272	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	140mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-3	M13
HFA3102B96	Intersil	IC TRANS ARRAY DUAL NPN 14-SOIC Transistor Type: 6 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain: 12.4dB ~ 17.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고2,240	12V	10GHz	1.8dB ~ 2.1dB @ 500MHz ~ 1GHz	12.4dB ~ 17.5dB	250mW	40 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
NE68519-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고687,096	6V	12GHz	1.5dB @ 2GHz	11dB	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
BFQ540,115	NXP	TRANS NPN 12V 9GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고2,592	15V	9GHz	1.9dB ~ 2.4dB @ 900MHz	-	1.2W	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BFG67/X,215	NXP	TRANS RF NPN 10V 8GHZ SOT143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB @ 1GHz Gain: - Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고3,952	10V	8GHz	1.3dB @ 1GHz	-	380mW	60 @ 15mA, 5V	50mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
JAN2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고3,936	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
BFP460E6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 50MA SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고7,296	5.8V	22GHz	0.7dB ~ 1.2dB @ 100MHz ~ 3GHz	12.5dB ~ 26.5dB	230mW	90 @ 20mA, 3V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP843FH6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN AMP TSFP-4-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.25V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz Gain: 13.5dB ~ 25dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Current - Collector (Ic) (Max): 55mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: TSFP-4-1	패키지: 4-SMD, Flat Leads	재고5,696	2.25V	-	0.8dB ~ 1.7dB @ 450MHz ~ 10GHz	13.5dB ~ 25dB	125mW	150 @ 15mA, 1.8V	55mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	TSFP-4-1
KSP10BU	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 25V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고1,207,020	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SC3772-4-TB-E	onsemi	BIP NPN 70MA 16V FT=3G Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVMMBTH81LT1G	onsemi	SOT-23 PNP TRANSISTOR 20V Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고12,621	20V	600MHz	-	-	225mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
60205	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFP 405 H6433

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고2,752

5V

25GHz

1.25dB @ 1.8GHz

23dB

75mW

60 @ 5mA, 4V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFR 380F E6327

Infineon Technologies

TRANSISTOR RF NPN 6V TSFP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고4,944

9V

14GHz

1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz

9.5dB ~ 13.5dB

380mW

90 @ 40mA, 3V

80mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

BFP 196R E6327

Infineon Technologies

TRANS RF NPN 12V 150MA SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

재고3,232

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16.5dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

BFS 481 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 20dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고3,056

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

20dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

BFS 466L6 E6327

Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5V, 9V
Frequency - Transition: 22GHz, 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain: 12dB ~ 17dB
Power - Max: 200mW, 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 50mA, 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: PG-TSLP-6

패키지: 6-XFDFN

재고6,800

5V, 9V

22GHz, 14GHz

1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz

12dB ~ 17dB

200mW, 210mW

90 @ 20mA, 3V / 90 @ 15mA, 3V

50mA, 35mA

150°C (TJ)

Surface Mount

6-XFDFN

PG-TSLP-6

BFR 380T E6327

Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고7,584

9V

14GHz

1.1dB @ 1.8GHz

12.5dB

380mW

60 @ 40mA, 3V

80mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

2SC5013-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고432,000

10V

10GHz

1.8dB @ 2GHz

9.5dB

150mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NE67839-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고5,440

6V

12GHz

1.5dB @ 2GHz

10dB

200mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC5606-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고1,116,000

3.3V

21GHz

1.2dB @ 2GHz

14dB

115mW

60 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-523

2SC5374A-TL-E

ON Semiconductor

TRANS NPN BIPO 100MA 10V SMCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 5.2GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 10.5dB @ 1GHz
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SMCP

패키지: SC-75, SOT-416

재고132,000

10V

5.2GHz

1.4dB @ 1GHz

10.5dB @ 1GHz

100mW

110 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SMCP

NE856M02-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 12dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고2,496

12V

6.5GHz

1.1dB @ 1GHz

12dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BFR93AW,115

NXP

TRANS NPN 12V 35MA 5GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고7,856

12V

5GHz

1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BF240_J35Z

Fairchild/ON Semiconductor

TRANS RF NPN 40V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,304

40V

1.1GHz

-

350mW

65 @ 1mA, 10V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MBC13900NT1

NXP

TRANS RF NPN LO NOISE SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6.5V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain: 15dB ~ 22dB
Power - Max: 188mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고4,192

6.5V

15GHz

0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz

15dB ~ 22dB

188mW

100 @ 5mA, 2V

20mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NE68833-T1-A

CEL

TRANS NPN 2GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고55,080

6V

4.5GHz

1.7dB ~ 2.5dB @ 2GHz

-

200mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE687M33-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 2GHz
Gain: -
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

패키지: 3-SMD, Flat Leads

재고3,760

3V

12GHz

1.5dB ~ 2dB @ 2GHz

-

90mW

70 @ 10mA, 1V

30mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE685M13-A

CEL

TRANSISTOR NPN 2GHZ M13

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 140mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-3
Supplier Device Package: M13

패키지: SOT-3

재고4,272

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

140mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-3

M13

HFA3102B96

Intersil

IC TRANS ARRAY DUAL NPN 14-SOIC

Transistor Type: 6 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Gain: 12.4dB ~ 17.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고2,240

12V

10GHz

1.8dB ~ 2.1dB @ 500MHz ~ 1GHz

12.4dB ~ 17.5dB

250mW

40 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

NE68519-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고687,096

6V

12GHz

1.5dB @ 2GHz

11dB

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-523

BFQ540,115

NXP

TRANS NPN 12V 9GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고2,592

15V

9GHz

1.9dB ~ 2.4dB @ 900MHz

-

1.2W

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BFG67/X,215

NXP

TRANS RF NPN 10V 8GHZ SOT143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1GHz
Gain: -
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고3,952

10V

8GHz

1.3dB @ 1GHz

-

380mW

60 @ 15mA, 5V

50mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

JAN2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고3,936

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

BFP460E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 50MA SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고7,296

5.8V

22GHz

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

12.5dB ~ 26.5dB

230mW

90 @ 20mA, 3V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP843FH6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP TSFP-4-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Current - Collector (Ic) (Max): 55mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: TSFP-4-1

패키지: 4-SMD, Flat Leads

재고5,696

2.25V

-

0.8dB ~ 1.7dB @ 450MHz ~ 10GHz

13.5dB ~ 25dB

125mW

150 @ 15mA, 1.8V

55mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

TSFP-4-1

KSP10BU

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고1,207,020

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SC3772-4-TB-E

onsemi

BIP NPN 70MA 16V FT=3G

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NSVMMBTH81LT1G

onsemi

SOT-23 PNP TRANSISTOR 20V

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고12,621

20V

600MHz

-

225mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

60205

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-