페이지 45 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP540ESDE6327HTSA1	Infineon Technologies	TRANS RF NPN 4.5V ESD SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고3,264	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	21.5dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFR 181T E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz Gain: 19.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고7,712	12V	8GHz	1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz	19.5dB	175mW	50 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
NE68039-T1-R46-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	패키지: TO-253-4, TO-253AA	재고2,576	10V	10GHz	1.8dB @ 2GHz	12dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
NE85633-T1B-R25-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,472	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	125 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFG25AW/X,115	NXP	TRANS RF NPN 5GHZ 5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	패키지: SOT-343 Reverse Pinning	재고2,720	5V	5GHz	1.9dB ~ 2dB @ 1GHz	-	500mW	50 @ 500µA, 1V	6.5mA	175°C (TJ)	Surface Mount	SOT-343 Reverse Pinning	4-SO
NE68018-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 10.2dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고4,608	10V	10GHz	1.8dB @ 2GHz	10.2dB	150mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NE46134-AZ	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고4,544	15V	5.5GHz	1.5dB ~ 2dB @ 500MHz ~ 1GHz	7dB	2W	40 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
KSC1730YBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,112	15V	1.1GHz	-	-	250mW	120 @ 5mA, 10V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC1674OBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고960,000	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	70 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N3663	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2.1GHz Noise Figure (dB Typ @ f): 6.5dB @ 60MHz Gain: 1.5dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,160	12V	2.1GHz	6.5dB @ 60MHz	1.5dB	350mW	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE664M04-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 20GHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 735mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고4,448	5V	20GHz	-	12dB	735mW	40 @ 100mA, 3V	500mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
BFS520,115	NXP	TRANS NPN 70MA 15V 9GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고5,184	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
MSC1175M	Microsemi Corporation	TRANS RF BIPO 400W 12A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	패키지: M218	재고2,992	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C (TJ)	Chassis Mount	M218	M218
1014-6A	Microsemi Corporation	TRANS RF BIPO 19W 1A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.5dB Power - Max: 19W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	패키지: 55LV	재고3,856	50V	1GHz ~ 1.4GHz	-	7dB ~ 7.5dB	19W	-	1A	200°C (TJ)	Chassis Mount	55LV	55LV
CPH6001A-TL-E	ON Semiconductor	TRANS NPN BIPO 12V 100MA CPH6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	패키지: SOT-23-6 Thin, TSOT-23-6	재고2,992	12V	6.7GHz	1.1dB @ 1GHz	11dB	800mW	90 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
2SC5490A-TL-H	ON Semiconductor	TRANS NPN BIPO 30MA 10V SSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz Gain: 10dB ~ 5.5dB @ 1.5GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-81 Supplier Device Package: 3-SSFP	패키지: SC-81	재고5,472	10V	8GHz	1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz	10dB ~ 5.5dB @ 1.5GHz	100mW	90 @ 10mA, 5V	30mA	150°C (TJ)	Surface Mount	SC-81	3-SSFP
2SC5646A-TL-H	ON Semiconductor	TRANS NPN BIPO 30MA 4V SSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 10GHz ~ 12.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 9.5dB ~ 10.5dB @ 2GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-81 Supplier Device Package: 3-SSFP	패키지: SC-81	재고2,704	4V	10GHz ~ 12.5GHz	1.5dB @ 2GHz	9.5dB ~ 10.5dB @ 2GHz	100mW	100 @ 5mA, 1V	30mA	150°C (TJ)	Surface Mount	SC-81	3-SSFP
MMBTH10-7	Diodes Incorporated	TRANS NPN VHF/UHF 25V SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고288,000	25V	650MHz	-	-	300mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PH2729-25M	M/A-Com Technology Solutions	TRANS BIPOLAR 25W 2.7-2.9GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.2dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고7,776	60V	-	-	9.2dB	70W	-	4A	200°C (TJ)	Chassis Mount	-	-
MSC80205	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE319P	NTE Electronics, Inc	RF TRANS NPN 20V 500MHZ TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 2.7dB @ 45MHz Gain: 29dB Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	20V	500MHz	2.7dB @ 45MHz	29dB	625mW	20 @ 2mA, 10V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
NESG2101M05-T1-A	Renesas Electronics Corporation	NESG2101 - NPN SIGE RF TRANSISTO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 17GHz Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz Gain: 11dB ~ 19dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M05	패키지: -	Request a Quote	5V	17GHz	0.6dB ~ 1.2dB @ 1GHz ~ 2GHz	11dB ~ 19dB	500mW	130 @ 15mA, 2V	100mA	-	Surface Mount	SOT-343F	M05
MRF421	MACOM Technology Solutions	TRANS RF NPN 20V 20A 211-11 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 100W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	패키지: -	Request a Quote	20V	-	-	12dB	100W	10 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
MS3456	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NE68730-T1	CEL	TRANS NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz Gain: - Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고8,079	3V	11GHz	1.3dB ~ 2dB @ 2GHz	-	90mW	70 @ 20mA, 2V	30mA	-	Surface Mount	SC-70, SOT-323	SOT-323
BLA6H0912-DTS-112	Ampleon USA Inc.	BLA6H0912-DTS/SOT634/TRAY Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CA3227E	Intersil	NPN TRANSISTOR ARRAY Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 85mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: -	Request a Quote	8V	3GHz	-	-	85mW	40 @ 1mA, 6V	20mA	175°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
2N5583	Solid State Inc.	PNP SIL RF TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 2V Current - Collector (Ic) (Max): 500mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	1.3GHz	-	-	1W	25 @ 100mA, 2V	500mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39

BFP540ESDE6327HTSA1

Infineon Technologies

TRANS RF NPN 4.5V ESD SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고3,264

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

21.5dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFR 181T E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
Gain: 19.5dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고7,712

12V

8GHz

1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz

19.5dB

175mW

50 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

NE68039-T1-R46-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

패키지: TO-253-4, TO-253AA

재고2,576

10V

10GHz

1.8dB @ 2GHz

12dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

NE85633-T1B-R25-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,472

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

125 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFG25AW/X,115

NXP

TRANS RF NPN 5GHZ 5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Current - Collector (Ic) (Max): 6.5mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Supplier Device Package: 4-SO

패키지: SOT-343 Reverse Pinning

재고2,720

5V

5GHz

1.9dB ~ 2dB @ 1GHz

-

500mW

50 @ 500µA, 1V

6.5mA

175°C (TJ)

Surface Mount

SOT-343 Reverse Pinning

4-SO

NE68018-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 10.2dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고4,608

10V

10GHz

1.8dB @ 2GHz

10.2dB

150mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NE46134-AZ

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 7dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고4,544

15V

5.5GHz

1.5dB ~ 2dB @ 500MHz ~ 1GHz

7dB

2W

40 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

KSC1730YBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,112

15V

1.1GHz

-

250mW

120 @ 5mA, 10V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC1674OBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고960,000

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

70 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N3663

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2.1GHz
Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
Gain: 1.5dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,160

12V

2.1GHz

6.5dB @ 60MHz

1.5dB

350mW

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE664M04-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 20GHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 735mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고4,448

5V

20GHz

-

12dB

735mW

40 @ 100mA, 3V

500mA

150°C (TJ)

Surface Mount

SOT-343F

BFS520,115

NXP

TRANS NPN 70MA 15V 9GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고5,184

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

MSC1175M

Microsemi Corporation

TRANS RF BIPO 400W 12A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

패키지: M218

재고2,992

65V

1.025GHz ~ 1.15GHz

-

8dB

400W

15 @ 1A, 5V

12A

250°C (TJ)

Chassis Mount

M218

1014-6A

Microsemi Corporation

TRANS RF BIPO 19W 1A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.5dB
Power - Max: 19W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

패키지: 55LV

재고3,856

50V

1GHz ~ 1.4GHz

-

7dB ~ 7.5dB

19W

-

1A

200°C (TJ)

Chassis Mount

55LV

CPH6001A-TL-E

ON Semiconductor

TRANS NPN BIPO 12V 100MA CPH6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

패키지: SOT-23-6 Thin, TSOT-23-6

재고2,992

12V

6.7GHz

1.1dB @ 1GHz

11dB

800mW

90 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

2SC5490A-TL-H

ON Semiconductor

TRANS NPN BIPO 30MA 10V SSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Gain: 10dB ~ 5.5dB @ 1.5GHz
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Supplier Device Package: 3-SSFP

패키지: SC-81

재고5,472

10V

8GHz

1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz

10dB ~ 5.5dB @ 1.5GHz

100mW

90 @ 10mA, 5V

30mA

150°C (TJ)

Surface Mount

SC-81

3-SSFP

2SC5646A-TL-H

ON Semiconductor

TRANS NPN BIPO 30MA 4V SSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Supplier Device Package: 3-SSFP

패키지: SC-81

재고2,704

4V

10GHz ~ 12.5GHz

1.5dB @ 2GHz

9.5dB ~ 10.5dB @ 2GHz

100mW

100 @ 5mA, 1V

30mA

150°C (TJ)

Surface Mount

SC-81

3-SSFP

MMBTH10-7

Diodes Incorporated

TRANS NPN VHF/UHF 25V SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고288,000

25V

650MHz

-

300mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PH2729-25M

M/A-Com Technology Solutions

TRANS BIPOLAR 25W 2.7-2.9GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.2dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,776

60V

-

9.2dB

70W

-

4A

200°C (TJ)

Chassis Mount

-

MSC80205

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NTE319P

NTE Electronics, Inc

RF TRANS NPN 20V 500MHZ TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 2.7dB @ 45MHz
Gain: 29dB
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

20V

500MHz

2.7dB @ 45MHz

29dB

625mW

20 @ 2mA, 10V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

NESG2101M05-T1-A

Renesas Electronics Corporation

NESG2101 - NPN SIGE RF TRANSISTO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain: 11dB ~ 19dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M05

패키지: -

Request a Quote

5V

17GHz

0.6dB ~ 1.2dB @ 1GHz ~ 2GHz

11dB ~ 19dB

500mW

130 @ 15mA, 2V

100mA

-

Surface Mount

SOT-343F

M05

MRF421

MACOM Technology Solutions

TRANS RF NPN 20V 20A 211-11

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 100W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

패키지: -

Request a Quote

20V

-

12dB

100W

10 @ 5A, 5V

20A

-

Chassis Mount

211-11, Style 2

MS3456

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NE68730-T1

CEL

TRANS NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
Gain: -
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고8,079

3V

11GHz

1.3dB ~ 2dB @ 2GHz

-

90mW

70 @ 20mA, 2V

30mA

-

Surface Mount

SC-70, SOT-323

SOT-323

BLA6H0912-DTS-112

Ampleon USA Inc.

BLA6H0912-DTS/SOT634/TRAY

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CA3227E

Intersil

NPN TRANSISTOR ARRAY

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 85mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: -

Request a Quote

8V

3GHz

-

85mW

40 @ 1mA, 6V

20mA

175°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

2N5583

Solid State Inc.

PNP SIL RF TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 2V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

1.3GHz

-

1W

25 @ 100mA, 2V

500mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39