페이지 58 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4562DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고706,836	Logic Level Gate	20V	-	25 mOhm @ 7.1A, 4.5V	1.6V @ 250µA	50nC @ 4.5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO6804	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고267,288	Logic Level Gate	20V	4A	32 mOhm @ 5A, 4.5V	1.2V @ 250µA	7.7nC @ 4.5V	725pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI5943DU-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 6A 8PWRPAK FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	패키지: PowerPAK? ChipFET? Dual	재고2,032	Logic Level Gate	12V	6A	64 mOhm @ 3.6A, 4.5V	1V @ 250µA	15nC @ 8V	460pF @ 6V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
ZXMN6A09DN8TC	Diodes Incorporated	MOSFET 2N-CH 60V 4.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고372,300	Logic Level Gate	60V	4.3A	40 mOhm @ 8.2A, 10V	3V @ 250µA	24.2nC @ 5V	1407pF @ 40V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
APTMC120TAM17CTPAG	Microsemi Corporation	MOSFET 6N-CH 1200V 147A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 147A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V Power - Max: 625W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	패키지: SP6	재고6,352	Standard	1200V (1.2kV)	147A	17 mOhm @ 100A, 20V	2.4V @ 20mA (Typ)	322nC @ 20V	5600pF @ 1000V	625W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
AO4832	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 10A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고334,080	Logic Level Gate	30V	10A	13 mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	910pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIRB40DP-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V 40A SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V Power - Max: 46.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고3,296	Standard	40V	40A (Tc)	3.25 mOhm @ 10A, 10V	2.4V @ 250µA	45nC @ 4.5V	4290pF @ 20V	46.2W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMP2035UTS-13	Diodes Incorporated	MOSFET 2P-CH 20V 6.04A 8TSSOP FET Type: 2 P-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.04A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Power - Max: 890mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고6,592	Logic Level Gate	20V	6.04A	35 mOhm @ 4A, 4.5V	1V @ 250µA	15.4nC @ 4.5V	1610pF @ 10V	890mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MCCD2004-TP	Micro Commercial Co	MOSFET 2N-CH 20V 10A FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1955pF @ 10V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: DFN2030-6	패키지: 6-WFDFN Exposed Pad	재고3,856	Standard	20V	10A	10 mOhm @ 8A, 10V	1V @ 250µA	18.5nC @ 4.5V	1955pF @ 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	DFN2030-6
2N7002VA	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 0.28A SOT563F FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563F	패키지: SOT-563, SOT-666	재고576,000	Logic Level Gate	60V	280mA	7.5 Ohm @ 50mA, 5V	2.5V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563F
SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.17A US6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power - Max: 285mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고58,848	Standard	60V	170mA	3.9 Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 4.5V	17pF @ 10V	285mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
ZXMC3A16DN8TA	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고457,956	Logic Level Gate	30V	4.9A, 4.1A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJT7807_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	20V	500mA (Ta)	1.2Ohm @ 500mA, 4.5V	1V @ 250µA	1.4nC @ 4.5V	38pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SP8M4TB	Rohm Semiconductor	MOSFET 30V 9A/7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	30V	9A, 7A	18mOhm @ 9A, 10V	2.5V @ 1mA	21nC @ 5V	1190pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HT8KC6TB1	Rohm Semiconductor	60V 15A, DUAL NCH+NCH, HSMT8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Power - Max: 2W (Ta), 14W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-HSMT (3.2x3)	패키지: -	Request a Quote	-	60V	6.5A (Ta), 15A (Tc)	29mOhm @ 6.5A, 10V	2.5V @ 1mA	7.6nC @ 10V	460pF @ 30V	2W (Ta), 14W (Tc)	150°C (TJ)	Surface Mount	8-PowerVDFN	8-HSMT (3.2x3)
DMN3270UVT-13	Diodes Incorporated	MOSFET 2N-CH 30V 1.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 40µA Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V Power - Max: 760mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	1.6A (Ta)	270mOhm @ 650mA, 4.5V	900mV @ 40µA	3.07nC @ 4.5V	161pF @ 15V	760mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NXH040P120MNF1PTG	onsemi	SIC 2N-CH 1200V 30A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V Power - Max: 74W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	1505pF @ 800V	74W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
AONE36132	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 25V 17A/60A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 12.5V, 3215pF @ 12.5V Power - Max: 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-DFN-EP (3.3x3.3)	패키지: -	Request a Quote	-	25V	17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)	4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V	1.8V @ 250µA	21nC @ 10V, 80nC @ 10V	880pF @ 12.5V, 3215pF @ 12.5V	2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-DFN-EP (3.3x3.3)
CMSBN4612-HF	Comchip Technology	MOSFET 2N-CH 22V 6A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: CSPB1313-4	패키지: -	Request a Quote	-	22V	6A (Ta)	36mOhm @ 3A, 4.5V	1.3V @ 250µA	7.2nC @ 10V	-	1.4W (Ta)	150°C	Surface Mount	4-SMD, No Lead	CSPB1313-4
UPA2350T1G-1-E4-A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NTMFD5875NLT1G	onsemi	MOSFET 2N-CH 60V 7A/22A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W (Ta), 32W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	패키지: -	Request a Quote	Logic Level Gate	60V	7A (Ta), 22A (Tc)	33mOhm @ 7.5A, 10V	3V @ 250µA	5.9nC @ 4.5V	540pF @ 25V	3.2W (Ta), 32W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
BSS84DWQ-13	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	50V	130mA (Ta)	10Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DI038N04PQ2	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: 21W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	패키지: -	Request a Quote	-	45V	38A (Tc)	13.5mOhm @ 10A, 10V	2.5V @ 250µA	14nC @ 10V	830pF @ 30V	21W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4
DMN62D4LDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.261A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	60V	261mA (Ta)	3Ohm @ 200mA, 10V	2V @ 250µA	1.04nC @ 10V	41pF @ 30V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SIS9634LDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 2.5W (Ta), 17.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	패키지: -	재고35,490	-	60V	6A (Ta), 6A (Tc)	31mOhm @ 5A, 10V	3V @ 250µA	11nC @ 10V	420pF @ 30V	2.5W (Ta), 17.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
PJQ5606_R2_00001	Panjit International Inc.	MOSFET N/P-CH 30V 7A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Power - Max: 1.7W (Ta), 21W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	패키지: -	Request a Quote	-	30V	7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)	19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V	2.5V @ 250µA	4.8nC @ 4.5V, 7.8nC @ 4.5V	429pF @ 25V, 846pF @ 15V	1.7W (Ta), 21W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
SQJ912AEP-T2_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	Request a Quote	-	40V	30A (Tc)	9.3mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
FF17MR12W1M1HB70BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고63	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B

SI4562DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고706,836

Logic Level Gate

20V

-

25 mOhm @ 7.1A, 4.5V

1.6V @ 250µA

50nC @ 4.5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO6804

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고267,288

Logic Level Gate

20V

4A

32 mOhm @ 5A, 4.5V

1.2V @ 250µA

7.7nC @ 4.5V

725pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI5943DU-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 6A 8PWRPAK

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
Power - Max: 8.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

패키지: PowerPAK? ChipFET? Dual

재고2,032

Logic Level Gate

12V

6A

64 mOhm @ 3.6A, 4.5V

1V @ 250µA

15nC @ 8V

460pF @ 6V

8.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

ZXMN6A09DN8TC

Diodes Incorporated

MOSFET 2N-CH 60V 4.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고372,300

Logic Level Gate

60V

4.3A

40 mOhm @ 8.2A, 10V

3V @ 250µA

24.2nC @ 5V

1407pF @ 40V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

APTMC120TAM17CTPAG

Microsemi Corporation

MOSFET 6N-CH 1200V 147A SP6P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 147A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V
Power - Max: 625W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

패키지: SP6

재고6,352

Standard

1200V (1.2kV)

147A

17 mOhm @ 100A, 20V

2.4V @ 20mA (Typ)

322nC @ 20V

5600pF @ 1000V

625W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

AO4832

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 10A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고334,080

Logic Level Gate

30V

10A

13 mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

910pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIRB40DP-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 40A SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Power - Max: 46.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고3,296

Standard

40V

40A (Tc)

3.25 mOhm @ 10A, 10V

2.4V @ 250µA

45nC @ 4.5V

4290pF @ 20V

46.2W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMP2035UTS-13

Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

FET Type: 2 P-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.04A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Power - Max: 890mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고6,592

Logic Level Gate

20V

6.04A

35 mOhm @ 4A, 4.5V

1V @ 250µA

15.4nC @ 4.5V

1610pF @ 10V

890mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MCCD2004-TP

Micro Commercial Co

MOSFET 2N-CH 20V 10A

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1955pF @ 10V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: DFN2030-6

패키지: 6-WFDFN Exposed Pad

재고3,856

Standard

20V

10A

10 mOhm @ 8A, 10V

1V @ 250µA

18.5nC @ 4.5V

1955pF @ 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

DFN2030-6

2N7002VA

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.28A SOT563F

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563F

패키지: SOT-563, SOT-666

재고576,000

Logic Level Gate

60V

280mA

7.5 Ohm @ 50mA, 5V

2.5V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563F

SSM6N7002CFU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.17A US6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Power - Max: 285mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고58,848

Standard

60V

170mA

3.9 Ohm @ 100mA, 10V

2.1V @ 250µA

0.35nC @ 4.5V

17pF @ 10V

285mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

ZXMC3A16DN8TA

Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고457,956

Logic Level Gate

30V

4.9A, 4.1A

35 mOhm @ 9A, 10V

1V @ 250µA (Min)

17.5nC @ 10V

796pF @ 25V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJT7807_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

Request a Quote

-

20V

500mA (Ta)

1.2Ohm @ 500mA, 4.5V

1V @ 250µA

1.4nC @ 4.5V

38pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SP8M4TB

Rohm Semiconductor

MOSFET 30V 9A/7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

30V

9A, 7A

18mOhm @ 9A, 10V

2.5V @ 1mA

21nC @ 5V

1190pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

HT8KC6TB1

Rohm Semiconductor

60V 15A, DUAL NCH+NCH, HSMT8, PO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Power - Max: 2W (Ta), 14W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-HSMT (3.2x3)

패키지: -

Request a Quote

-

60V

6.5A (Ta), 15A (Tc)

29mOhm @ 6.5A, 10V

2.5V @ 1mA

7.6nC @ 10V

460pF @ 30V

2W (Ta), 14W (Tc)

150°C (TJ)

Surface Mount

8-PowerVDFN

8-HSMT (3.2x3)

DMN3270UVT-13

Diodes Incorporated

MOSFET 2N-CH 30V 1.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Power - Max: 760mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

Request a Quote

-

30V

1.6A (Ta)

270mOhm @ 650mA, 4.5V

900mV @ 40µA

3.07nC @ 4.5V

161pF @ 15V

760mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NXH040P120MNF1PTG

onsemi

SIC 2N-CH 1200V 30A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Power - Max: 74W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

1200V (1.2kV)

30A (Tc)

56mOhm @ 25A, 20V

4.3V @ 10mA

122.1nC @ 20V

1505pF @ 800V

74W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

AONE36132

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 17A/60A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 12.5V, 3215pF @ 12.5V
Power - Max: 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)

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25V

17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)

4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V

1.8V @ 250µA

21nC @ 10V, 80nC @ 10V

880pF @ 12.5V, 3215pF @ 12.5V

2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-DFN-EP (3.3x3.3)

CMSBN4612-HF

Comchip Technology

MOSFET 2N-CH 22V 6A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: CSPB1313-4

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22V

6A (Ta)

36mOhm @ 3A, 4.5V

1.3V @ 250µA

7.2nC @ 10V

-

1.4W (Ta)

150°C

Surface Mount

4-SMD, No Lead

CSPB1313-4

UPA2350T1G-1-E4-A

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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NTMFD5875NLT1G

onsemi

MOSFET 2N-CH 60V 7A/22A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W (Ta), 32W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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Logic Level Gate

60V

7A (Ta), 22A (Tc)

33mOhm @ 7.5A, 10V

3V @ 250µA

5.9nC @ 4.5V

540pF @ 25V

3.2W (Ta), 32W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

BSS84DWQ-13

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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50V

130mA (Ta)

10Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DI038N04PQ2

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Power - Max: 21W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: TDSON-8-4

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45V

38A (Tc)

13.5mOhm @ 10A, 10V

2.5V @ 250µA

14nC @ 10V

830pF @ 30V

21W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

TDSON-8-4

DMN62D4LDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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60V

261mA (Ta)

3Ohm @ 200mA, 10V

2V @ 250µA

1.04nC @ 10V

41pF @ 30V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SIS9634LDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 2.5W (Ta), 17.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

패키지: -

재고35,490

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60V

6A (Ta), 6A (Tc)

31mOhm @ 5A, 10V

3V @ 250µA

11nC @ 10V

420pF @ 30V

2.5W (Ta), 17.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

PJQ5606_R2_00001

Panjit International Inc.

MOSFET N/P-CH 30V 7A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Power - Max: 1.7W (Ta), 21W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

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30V

7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)

19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V

2.5V @ 250µA

4.8nC @ 4.5V, 7.8nC @ 4.5V

429pF @ 25V, 846pF @ 15V

1.7W (Ta), 21W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

SQJ912AEP-T2_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

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40V

30A (Tc)

9.3mOhm @ 9.7A, 10V

2.5V @ 250µA

38nC @ 10V

1835pF @ 20V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

FF17MR12W1M1HB70BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고63

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1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B