페이지 61 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IPG20N06S3L-35	Infineon Technologies	MOSFET 2N-CH 55V 20A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Power - Max: 30W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: 8-PowerVDFN	재고37,920	Logic Level Gate	55V	20A	35 mOhm @ 11A, 10V	2.2V @ 15µA	23nC @ 10V	1730pF @ 25V	30W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SI5920DC-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 8V 4A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V Power - Max: 3.12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고358,272	Logic Level Gate	8V	4A	32 mOhm @ 6.8A, 4.5V	1V @ 250µA	12nC @ 5V	680pF @ 4V	3.12W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI6925ADQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 3.3A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고8,868	Logic Level Gate	20V	3.3A	45 mOhm @ 3.9A, 4.5V	1.8V @ 250µA	6nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTJD4401NT2G	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고5,200	Logic Level Gate	20V	630mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
APTM10DDAM19T3G	Microsemi Corporation	MOSFET 2N-CH 100V 70A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고3,232	Standard	100V	70A	21 mOhm @ 35A, 10V	4V @ 1mA	200nC @ 10V	5100pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
ALD212902SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,224	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
VEC2616-TL-W-Z	ON Semiconductor	MOSFET N/P-CH 60V 3A/2.5A VEC8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	패키지: 8-SMD, Flat Lead	재고2,016	Logic Level Gate, 4V Drive	60V	3A, 2.5A	80 mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
AO4892	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 100V 4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고41,040	Standard	100V	4A	68 mOhm @ 4A, 10V	2.8V @ 250µA	12nC @ 10V	415pF @ 50V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC25D1UVT-13	Diodes Incorporated	MOSFET N/P-CH 25V/12V TSOT26 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V, 12V Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: SOT-23-6 Thin, TSOT-23-6	재고6,672	Standard	25V, 12V	500mA, 3.9A	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.9nC @ 10V	27.6pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
ALD310700APCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고4,288	Standard	8V	-	-	20mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
IRF9910TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A/12A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고543,600	Logic Level Gate	20V	10A, 12A	9.3 mOhm @ 12A, 10V	2.55V @ 250µA	11nC @ 4.5V	900pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP56D0UV-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.16A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고45,492	Logic Level Gate	50V	160mA	6 Ohm @ 100mA, 4V	1.2V @ 250µA	0.58nC @ 4V	50.54pF @ 25V	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN21D1UDA-7B	Diodes Incorporated	MOSFET 2N-CH 20V 0.455A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	패키지: -	Request a Quote	-	20V	455mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.41nC @ 4.5V	31pF @ 15V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
XP10C150M	YAGEO XSEMI	MOSFET N/P-CH 100V 2.5A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V, 51.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V, 3040pF @ 50V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	패키지: -	재고3,000	-	100V	2.5A (Ta)	150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V	3V @ 250µA	17.6nC @ 10V, 51.2nC @ 10V	960pF @ 50V, 3040pF @ 50V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
SH8K26GZ0TB1	Rohm Semiconductor	MOSFET 2N-CH 40V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고22,446	-	40V	6A (Ta)	38mOhm @ 6A, 10V	2.5V @ 1mA	2.9nC @ 5V	280pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMC8010A	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2022UDH-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V V-DFN3030-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK9K35-60RAX	Nexperia USA Inc.	MOSFET 2N-CH 60V 22A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V Power - Max: 38W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	재고7,653	Logic Level Gate	60V	22A (Ta)	32mOhm @ 5A, 10V	2.1V @ 1mA	7.8nC @ 5V	1081pF @ 25V	38W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SQ3987EV-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power - Max: 1.67W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: -	재고22,176	-	30V	3A (Tc)	133mOhm @ 1.5A, 10V	2.5V @ 250µA	12.2nC @ 10V	570pF @ 15V	1.67W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
PJX8828_R1_00001	Panjit International Inc.	MOSFET 2N-CH 30V 0.3A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고7,338	-	30V	300mA (Ta)	1.2Ohm @ 300mA, 4.5V	1V @ 250µA	0.9nC @ 4.5V	45pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMT4014LDV-7	Diodes Incorporated	MOSFET 2N-CH 40V 8.5A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	패키지: -	Request a Quote	-	40V	8.5A (Ta), 26.5A (Tc)	19mOhm @ 20A, 10V	3V @ 250µA	11.2nC @ 10V	750pF @ 20V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
MSCSM70DUM017AG	Microchip Technology	SIC 2N-CH 700V 1021A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 1021A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.4V @ 36mA Gate Charge (Qg) (Max) @ Vgs: 1935nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 40500pF @ 700V Power - Max: 2750W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	700V	1021A (Tc)	2.1mOhm @ 360A, 20V	2.4V @ 36mA	1935nC @ 20V	40500pF @ 700V	2750W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
UPA503T-T2-A	Renesas Electronics Corporation	MOSFET 2P-CH 50V 0.1A SC59-5 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V Power - Max: 300mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SC-59-5, Mini Mold	패키지: -	Request a Quote	-	50V	100mA	60Ohm @ 10mA, 10V	2.5V @ 1µA	-	17pF @ 5V	300mW	-	Surface Mount	SC-74A, SOT-753	SC-59-5, Mini Mold
CBB021M12FM3	Wolfspeed, Inc.	SIC 4N-CH 1200V 105A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	105A (Tj)	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	10300pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
MTI85W100GC-SMD	IXYS	MOSFET 6N-CH 100V 120A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	100V	120A (Tc)	4mOhm @ 80A, 10V	3.5V @ 150µA	88nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL™
MCQD08N03A-TP	Micro Commercial Co	MOSFET 2N-CH 30V 8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고11,022	-	30V	8.5A	23mOhm @ 8.5A, 10V	2.2V @ 250µA	5.2nC @ 4.5V	490pF @ 15V	3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CAB500M17HM3	Wolfspeed, Inc.	SIC 2N-CH 1700V 653A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 653A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 3.6V @ 203mA Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	-	1700V (1.7kV)	653A (Tc)	2.6mOhm @ 500A, 15V	3.6V @ 203mA	1992nC @ 15V	64900pF @ 1200V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
SCH2819-P-TL-H	onsemi	NCH+SBD 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IPG20N06S3L-35

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Power - Max: 30W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: 8-PowerVDFN

재고37,920

Logic Level Gate

55V

20A

35 mOhm @ 11A, 10V

2.2V @ 15µA

23nC @ 10V

1730pF @ 25V

30W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

SI5920DC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 8V 4A 1206-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Power - Max: 3.12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고358,272

Logic Level Gate

8V

4A

32 mOhm @ 6.8A, 4.5V

1V @ 250µA

12nC @ 5V

680pF @ 4V

3.12W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI6925ADQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 3.3A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고8,868

Logic Level Gate

20V

3.3A

45 mOhm @ 3.9A, 4.5V

1.8V @ 250µA

6nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTJD4401NT2G

ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고5,200

Logic Level Gate

20V

630mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

APTM10DDAM19T3G

Microsemi Corporation

MOSFET 2N-CH 100V 70A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고3,232

Standard

100V

70A

21 mOhm @ 35A, 10V

4V @ 1mA

200nC @ 10V

5100pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

ALD212902SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,224

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

VEC2616-TL-W-Z

ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

패키지: 8-SMD, Flat Lead

재고2,016

Logic Level Gate, 4V Drive

60V

3A, 2.5A

80 mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

AO4892

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 100V 4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고41,040

Standard

100V

4A

68 mOhm @ 4A, 10V

2.8V @ 250µA

12nC @ 10V

415pF @ 50V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC25D1UVT-13

Diodes Incorporated

MOSFET N/P-CH 25V/12V TSOT26

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: SOT-23-6 Thin, TSOT-23-6

재고6,672

Standard

25V, 12V

500mA, 3.9A

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.9nC @ 10V

27.6pF @ 10V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

ALD310700APCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고4,288

Standard

8V

-

20mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

IRF9910TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고543,600

Logic Level Gate

20V

10A, 12A

9.3 mOhm @ 12A, 10V

2.55V @ 250µA

11nC @ 4.5V

900pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP56D0UV-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.16A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고45,492

Logic Level Gate

50V

160mA

6 Ohm @ 100mA, 4V

1.2V @ 250µA

0.58nC @ 4V

50.54pF @ 25V

400mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN21D1UDA-7B

Diodes Incorporated

MOSFET 2N-CH 20V 0.455A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

패키지: -

Request a Quote

-

20V

455mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

0.41nC @ 4.5V

31pF @ 15V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

XP10C150M

YAGEO XSEMI

MOSFET N/P-CH 100V 2.5A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V, 51.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V, 3040pF @ 50V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

패키지: -

재고3,000

-

100V

2.5A (Ta)

150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V

3V @ 250µA

17.6nC @ 10V, 51.2nC @ 10V

960pF @ 50V, 3040pF @ 50V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

SH8K26GZ0TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고22,446

-

40V

6A (Ta)

38mOhm @ 6A, 10V

2.5V @ 1mA

2.9nC @ 5V

280pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMC8010A

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DMN2022UDH-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V V-DFN3030-8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BUK9K35-60RAX

Nexperia USA Inc.

MOSFET 2N-CH 60V 22A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Power - Max: 38W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

재고7,653

Logic Level Gate

60V

22A (Ta)

32mOhm @ 5A, 10V

2.1V @ 1mA

7.8nC @ 5V

1081pF @ 25V

38W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SQ3987EV-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power - Max: 1.67W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: -

재고22,176

-

30V

3A (Tc)

133mOhm @ 1.5A, 10V

2.5V @ 250µA

12.2nC @ 10V

570pF @ 15V

1.67W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

PJX8828_R1_00001

Panjit International Inc.

MOSFET 2N-CH 30V 0.3A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고7,338

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30V

300mA (Ta)

1.2Ohm @ 300mA, 4.5V

1V @ 250µA

0.9nC @ 4.5V

45pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMT4014LDV-7

Diodes Incorporated

MOSFET 2N-CH 40V 8.5A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

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40V

8.5A (Ta), 26.5A (Tc)

19mOhm @ 20A, 10V

3V @ 250µA

11.2nC @ 10V

750pF @ 20V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

MSCSM70DUM017AG

Microchip Technology

SIC 2N-CH 700V 1021A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 1021A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 36mA
Gate Charge (Qg) (Max) @ Vgs: 1935nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 40500pF @ 700V
Power - Max: 2750W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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700V

1021A (Tc)

2.1mOhm @ 360A, 20V

2.4V @ 36mA

1935nC @ 20V

40500pF @ 700V

2750W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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UPA503T-T2-A

Renesas Electronics Corporation

MOSFET 2P-CH 50V 0.1A SC59-5

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
Power - Max: 300mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-59-5, Mini Mold

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50V

100mA

60Ohm @ 10mA, 10V

2.5V @ 1µA

-

17pF @ 5V

300mW

-

Surface Mount

SC-74A, SOT-753

SC-59-5, Mini Mold

CBB021M12FM3

Wolfspeed, Inc.

SIC 4N-CH 1200V 105A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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1200V (1.2kV)

105A (Tj)

14mOhm @ 100A, 15V

3.6V @ 35mA

324nC @ 15V

10300pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

MTI85W100GC-SMD

IXYS

MOSFET 6N-CH 100V 120A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL™

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100V

120A (Tc)

4mOhm @ 80A, 10V

3.5V @ 150µA

88nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL™

MCQD08N03A-TP

Micro Commercial Co

MOSFET 2N-CH 30V 8.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고11,022

-

30V

8.5A

23mOhm @ 8.5A, 10V

2.2V @ 250µA

5.2nC @ 4.5V

490pF @ 15V

3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CAB500M17HM3

Wolfspeed, Inc.

SIC 2N-CH 1700V 653A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

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1700V (1.7kV)

653A (Tc)

2.6mOhm @ 500A, 15V

3.6V @ 203mA

1992nC @ 15V

64900pF @ 1200V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SCH2819-P-TL-H

onsemi

NCH+SBD 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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