페이지 60 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7331TR	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고540,000	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO8801AL	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고5,152	Logic Level Gate	20V	4.5A	42 mOhm @ 4.5A, 4.5V	900mV @ 250µA	11nC @ 4.5V	905pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
LP1030DK1-G	Microchip Technology	MOSFET 2P-CH 300V SOT23-5 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V Power - Max: - Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-23-5	패키지: SC-74A, SOT-753	재고4,128	Standard	300V	-	180 Ohm @ 20mA, 7V	2.4V @ 1mA	-	10.8pF @ 25V	-	-25°C ~ 125°C (TJ)	Surface Mount	SC-74A, SOT-753	SOT-23-5
AO5803E	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 0.6A SC89-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 800 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 400mW Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고24,000	Logic Level Gate	20V	-	800 mOhm @ 600mA, 4.5V	900mV @ 250µA	-	100pF @ 10V	400mW	-50°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
ECH8653-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 7.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고22,800	Logic Level Gate	20V	7.5A	20 mOhm @ 4A, 8V	-	18.5nC @ 8V	1280pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI4567DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 5A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V Power - Max: 2.75W, 2.95W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,664	Standard	40V	5A, 4.4A	60 mOhm @ 4.1A, 10V	2.2V @ 250µA	12nC @ 10V	355pF @ 20V	2.75W, 2.95W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC1229UFDB-13	Diodes Incorporated	MOSFET N/P-CH 12V U-DFN2020-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고4,080	Logic Level Gate	12V	5.6A, 3.8A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
EPC2102ENGRT	EPC	MOSFET ARRAY 2N-CH 60V DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tj) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,752	GaNFET (Gallium Nitride)	60V	23A (Tj)	4.4 mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRF7343TRPBF	Infineon Technologies	MOSFET N/P-CH 55V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,019,832	Standard	55V	4.7A, 3.4A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7331TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고556,428	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SP8M51TB1	Rohm Semiconductor	MOSFET N/P-CH 100V 3A/2.5A SOP8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,227,840	Standard	100V	3A, 2.5A	-	-	-	-	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMG8822UTS-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.9A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 10V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고19,836	Logic Level Gate	20V	4.9A	25 mOhm @ 8.2A, 4.5V	900mV @ 250µA	9.6nC @ 4.5V	841pF @ 10V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AO4807	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고11,407,248	Logic Level Gate	30V	6A	35 mOhm @ 6A, 10V	2.4V @ 250µA	16nC @ 10V	760pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3590DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고187,140	Logic Level Gate	30V	2.5A, 1.7A	77 mOhm @ 3A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
BSS84DW-7-F	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고6,340,884	Logic Level Gate	50V	130mA	10 Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DI028N10PQ2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Power - Max: 32.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	패키지: -	Request a Quote	-	100V	28A (Tc)	21mOhm @ 7A, 10V	2.5V @ 250µA	22nC @ 10V	1028pF @ 50V	32.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4
BUK9MTT-65PBB-518	Nexperia USA Inc.	MOSFET 2N-CH 65V 3.8A 20SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 90.4mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Power - Max: 3.15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	패키지: -	Request a Quote	Logic Level Gate	65V	3.8A (Tc)	90.4mOhm @ 3A, 10V	2V @ 1mA	6.3nC @ 5V	535pF @ 25V	3.15W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
FDMC0222	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRF7303QTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 4.9A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	30V	4.9A	50mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQ9945BEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.4A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고5,925	-	60V	5.4A (Tc)	64mOhm @ 3.4A, 10V	2.5V @ 250µA	12nC @ 10V	470pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMP2108UCB6-7	Diodes Incorporated	MOSFET 2P-CH 20V 2.25A 6UWLB FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.25A Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V Power - Max: 840mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLBGA Supplier Device Package: U-WLB1510-6	패키지: -	Request a Quote	-	20V	2.25A	55mOhm @ 1A, 4.5V	1.1V @ 250µA	2.1nC @ 4.5V	269pF @ 10V	840mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, WLBGA	U-WLB1510-6
CPH6601-TL-E	onsemi	PCH+PCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FDW2515NZ	Fairchild Semiconductor	MOSFET 2N-CH 20V 5.8A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	-	20V	5.8A (Ta)	28mOhm @ 5.8A, 4.5V	1.5V @ 250µA	12nC @ 5V	745pF @ 10V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SH8KB7TB1	Rohm Semiconductor	MOSFET 2N-CH 40V 13.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고22,371	-	40V	13.5A (Ta)	8.4mOhm @ 13.5A, 10V	2.5V @ 1mA	27nC @ 10V	1570pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA1890GR-9JG-E1-A	Renesas Electronics Corporation	MOSFET N/P-CH 30V 6A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	패키지: -	Request a Quote	Logic Level Gate	30V	6A, 5A	27mOhm @ 3A, 10V	2.5V @ 1mA	14nC @ 10V	748pF @ 10V	2W	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
SCH2830-S-TL-E	onsemi	PCH+SBD 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMNH4006SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2991UDA-7B	Diodes Incorporated	MOSFET 2N-CH 20V 0.45A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V Power - Max: 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	패키지: -	재고168,192	-	20V	450mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V	21.5pF @ 16V	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6

IRF7331TR

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고540,000

Logic Level Gate

20V

7A

30 mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO8801AL

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고5,152

Logic Level Gate

20V

4.5A

42 mOhm @ 4.5A, 4.5V

900mV @ 250µA

11nC @ 4.5V

905pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

LP1030DK1-G

Microchip Technology

MOSFET 2P-CH 300V SOT23-5

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V
Power - Max: -
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-23-5

패키지: SC-74A, SOT-753

재고4,128

Standard

300V

-

180 Ohm @ 20mA, 7V

2.4V @ 1mA

-

10.8pF @ 25V

-

-25°C ~ 125°C (TJ)

Surface Mount

SC-74A, SOT-753

SOT-23-5

AO5803E

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 0.6A SC89-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 800 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 400mW
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고24,000

Logic Level Gate

20V

-

800 mOhm @ 600mA, 4.5V

900mV @ 250µA

-

100pF @ 10V

400mW

-50°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

ECH8653-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고22,800

Logic Level Gate

20V

7.5A

20 mOhm @ 4A, 8V

-

18.5nC @ 8V

1280pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

SI4567DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Power - Max: 2.75W, 2.95W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,664

Standard

40V

5A, 4.4A

60 mOhm @ 4.1A, 10V

2.2V @ 250µA

12nC @ 10V

355pF @ 20V

2.75W, 2.95W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC1229UFDB-13

Diodes Incorporated

MOSFET N/P-CH 12V U-DFN2020-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고4,080

Logic Level Gate

12V

5.6A, 3.8A

29 mOhm @ 5A, 4.5V

1V @ 250µA

19.6nC @ 8V

914pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

EPC2102ENGRT

EPC

MOSFET ARRAY 2N-CH 60V DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,752

GaNFET (Gallium Nitride)

60V

23A (Tj)

4.4 mOhm @ 20A, 5V

2.5V @ 7mA

6.8nC @ 5V

830pF @ 30V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

IRF7343TRPBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,019,832

Standard

55V

4.7A, 3.4A

50 mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7331TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고556,428

Logic Level Gate

20V

7A

30 mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SP8M51TB1

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A SOP8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,227,840

Standard

100V

3A, 2.5A

-

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMG8822UTS-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.9A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 10V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고19,836

Logic Level Gate

20V

4.9A

25 mOhm @ 8.2A, 4.5V

900mV @ 250µA

9.6nC @ 4.5V

841pF @ 10V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AO4807

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고11,407,248

Logic Level Gate

30V

6A

35 mOhm @ 6A, 10V

2.4V @ 250µA

16nC @ 10V

760pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3590DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고187,140

Logic Level Gate

30V

2.5A, 1.7A

77 mOhm @ 3A, 4.5V

1.5V @ 250µA

4.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

BSS84DW-7-F

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고6,340,884

Logic Level Gate

50V

130mA

10 Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DI028N10PQ2-AQ

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V
Power - Max: 32.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: TDSON-8-4

패키지: -

Request a Quote

-

100V

28A (Tc)

21mOhm @ 7A, 10V

2.5V @ 250µA

22nC @ 10V

1028pF @ 50V

32.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

TDSON-8-4

BUK9MTT-65PBB-518

Nexperia USA Inc.

MOSFET 2N-CH 65V 3.8A 20SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 90.4mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Power - Max: 3.15W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

패키지: -

Request a Quote

Logic Level Gate

65V

3.8A (Tc)

90.4mOhm @ 3A, 10V

2V @ 1mA

6.3nC @ 5V

535pF @ 25V

3.15W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO

FDMC0222

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IRF7303QTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

Request a Quote

-

30V

4.9A

50mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQ9945BEY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.4A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고5,925

-

60V

5.4A (Tc)

64mOhm @ 3.4A, 10V

2.5V @ 250µA

12nC @ 10V

470pF @ 25V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMP2108UCB6-7

Diodes Incorporated

MOSFET 2P-CH 20V 2.25A 6UWLB

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.25A
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V
Power - Max: 840mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLBGA
Supplier Device Package: U-WLB1510-6

패키지: -

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-

20V

2.25A

55mOhm @ 1A, 4.5V

1.1V @ 250µA

2.1nC @ 4.5V

269pF @ 10V

840mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFBGA, WLBGA

U-WLB1510-6

CPH6601-TL-E

onsemi

PCH+PCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

FDW2515NZ

Fairchild Semiconductor

MOSFET 2N-CH 20V 5.8A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

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-

20V

5.8A (Ta)

28mOhm @ 5.8A, 4.5V

1.5V @ 250µA

12nC @ 5V

745pF @ 10V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SH8KB7TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 13.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고22,371

-

40V

13.5A (Ta)

8.4mOhm @ 13.5A, 10V

2.5V @ 1mA

27nC @ 10V

1570pF @ 20V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

UPA1890GR-9JG-E1-A

Renesas Electronics Corporation

MOSFET N/P-CH 30V 6A/5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP

패키지: -

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Logic Level Gate

30V

6A, 5A

27mOhm @ 3A, 10V

2.5V @ 1mA

14nC @ 10V

748pF @ 10V

2W

-

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-PSOP

SCH2830-S-TL-E

onsemi

PCH+SBD 1.8V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMNH4006SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMN2991UDA-7B

Diodes Incorporated

MOSFET 2N-CH 20V 0.45A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V
Power - Max: 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

패키지: -

재고168,192

-

20V

450mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V

21.5pF @ 16V

310mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6