페이지 7 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 183W E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고5,328	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	18.5dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
PH3134-11S	M/A-Com Technology Solutions	TRANSISTOR 11W 36V 3.10-3.40GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 11W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,568	60V	-	-	8dB	11W	-	1.3A	200°C (TJ)	Chassis Mount	-	-
2N4427	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB @ 175MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고61,800	40V	500MHz	-	10dB @ 175MHz	1W	10 @ 100mA, 5V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NE68033-T1B-R45-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,504	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	125 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MPSH81_D75Z	Fairchild/ON Semiconductor	TRANS RF PNP 20V 50MA TO-92 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,728	20V	600MHz	-	-	350mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
START405TR	STMicroelectronics	TRANS RF NPN SILICON SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 19dB Power - Max: 45mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V Current - Collector (Ic) (Max): 10mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	패키지: SC-82A, SOT-343	재고396,000	4.5V	-	1.1dB @ 1.8GHz	19dB	45mW	160 @ 5mA, 4V	10mA	-	Surface Mount	SC-82A, SOT-343	-
AT-41533-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 14.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,136	12V	-	1dB ~ 1.6dB @ 900MHz ~ 2.4GHz	9dB ~ 14.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE68018-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 10.2dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고2,544	10V	10GHz	1.8dB @ 2GHz	10.2dB	150mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NE52418-A	CEL	IC AMP HBT GAAS LN 4-SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz Gain: 14dB ~ 16dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-Super Mini Mold	패키지: SC-82A, SOT-343	재고3,120	5V	-	1dB ~ 1.5dB @ 2GHz	14dB ~ 16dB	150mW	100 @ 3mA, 2V	40mA	125°C (TJ)	Surface Mount	SC-82A, SOT-343	4-Super Mini Mold
KSC2786RBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body	재고276,000	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	40 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
AT-41486-BLKG	Broadcom Limited	TRANS SIL LOW NOISE BIPOL 45MD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 9dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	패키지: SOT-86	재고5,232	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	9dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
BFS17A,215	NXP	TRANS NPN 25MA 15V 3GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 2.8GHz Noise Figure (dB Typ @ f): 2.5dB @ 800MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,320	15V	2.8GHz	2.5dB @ 800MHz	-	300mW	25 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG310W/XR,115	NXP	TRANS NPN 6V 10MA 14GHZ SOT343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 2GHz Gain: 18dB Power - Max: 60mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V Current - Collector (Ic) (Max): 10mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: SC-82A, SOT-343	재고3,568	6V	14GHz	1dB @ 2GHz	18dB	60mW	60 @ 5mA, 3V	10mA	175°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
BFR505,215	NXP	TRANS NPN 15V 9GHZ SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,392	15V	9GHz	1.2dB ~ 2.1dB @ 900MHz	-	150mW	60 @ 5mA, 6V	18mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG590/X,215	NXP	TRANS RF NPN 15V 5GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고5,184	15V	5GHz	-	-	400mW	60 @ 70mA, 8V	200mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
1214-370M	Microsemi Corporation	TRANS RF BIPO 600W 25A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 8.7dB ~ 9dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	패키지: 55ST	재고3,424	75V	1.2GHz ~ 1.4GHz	-	8.7dB ~ 9dB	600W	10 @ 5A, 5V	25A	200°C (TJ)	Chassis Mount	55ST	55ST
1214-220M	Microsemi Corporation	TRANS RF BIPO 700W 20A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	패키지: 55ST	재고6,864	70V	1.2GHz ~ 1.4GHz	-	7.4dB	700W	10 @ 1A, 5V	20A	200°C (TJ)	Chassis Mount	55ST	55ST
MS2207	Microsemi Corporation	TRANS RF BIPO 24A 65V M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	패키지: M216	재고6,352	65V	1.09GHz	-	8dB	880W	10 @ 5A, 5V	24A	250°C (TJ)	Chassis Mount	M216	M216
MS1226	Microsemi Corporation	TRANS BIPO NPN M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 36V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 18dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고7,824	36V	30MHz	-	18dB	80W	10 @ 500mA, 5V	4.5A	200°C (TJ)	Chassis Mount	M113	M113
2SC4915-Y,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고4,400	30V	550MHz	2.3dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
BFP640H6327XTSA1	Infineon Technologies	TRANS RF NPN 4V 50MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고26,490	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	12.5dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
2N918	Central Semiconductor Corp	TRANS RF NPN 15V 50MA TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60kHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고41,412	15V	600MHz	6dB @ 60kHz	-	200mW	20 @ 3mA, 1V	50mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
BFU710F,115	NXP	TRANSISTOR NPN SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 43GHz Noise Figure (dB Typ @ f): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz Gain: - Power - Max: 136mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 2V Current - Collector (Ic) (Max): 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	패키지: SOT-343F	재고28,980	2.8V	43GHz	0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz	-	136mW	200 @ 1mA, 2V	10mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
NTE2501	NTE Electronics, Inc	RF TRANS NPN 300V 70MHZ TO126 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 300V Frequency - Transition: 70MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	300V	70MHz	-	-	1.5W	100 @ 10mA, 10V	100mA	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
MRF1004MB	MACOM Technology Solutions	TRANS NPN 4W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 4W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 75mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 332A-03 Supplier Device Package: 332A-03, Style 1	패키지: -	Request a Quote	20V	-	-	11dB	4W	10 @ 75mA, 5V	250mA	-	Chassis Mount	332A-03	332A-03, Style 1
2SC5508-A	CEL	RF TRANS NPN 3.3V 25GHZ SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 19dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: -	패키지: -	Request a Quote	3.3V	25GHz	1.1dB @ 2GHz	19dB	115mW	50 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-343F	-
2N3799	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500µA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	60V	-	-	-	1.2W	300 @ 500µA, 5V	50mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
SD1309-01H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFR 183W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고5,328

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

18.5dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

PH3134-11S

M/A-Com Technology Solutions

TRANSISTOR 11W 36V 3.10-3.40GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 11W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,568

60V

-

8dB

11W

-

1.3A

200°C (TJ)

Chassis Mount

-

2N4427

Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB @ 175MHz
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고61,800

40V

500MHz

-

10dB @ 175MHz

1W

10 @ 100mA, 5V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NE68033-T1B-R45-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,504

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

125 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MPSH81_D75Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,728

20V

600MHz

-

350mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

START405TR

STMicroelectronics

TRANS RF NPN SILICON SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 19dB
Power - Max: 45mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

패키지: SC-82A, SOT-343

재고396,000

4.5V

-

1.1dB @ 1.8GHz

19dB

45mW

160 @ 5mA, 4V

10mA

-

Surface Mount

SC-82A, SOT-343

-

AT-41533-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 14.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,136

12V

-

1dB ~ 1.6dB @ 900MHz ~ 2.4GHz

9dB ~ 14.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE68018-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 10.2dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고2,544

10V

10GHz

1.8dB @ 2GHz

10.2dB

150mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NE52418-A

CEL

IC AMP HBT GAAS LN 4-SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz
Gain: 14dB ~ 16dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-Super Mini Mold

패키지: SC-82A, SOT-343

재고3,120

5V

-

1dB ~ 1.5dB @ 2GHz

14dB ~ 16dB

150mW

100 @ 3mA, 2V

40mA

125°C (TJ)

Surface Mount

SC-82A, SOT-343

4-Super Mini Mold

KSC2786RBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body

재고276,000

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

40 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

AT-41486-BLKG

Broadcom Limited

TRANS SIL LOW NOISE BIPOL 45MD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 9dB ~ 18dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

패키지: SOT-86

재고5,232

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

9dB ~ 18dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

BFS17A,215

NXP

TRANS NPN 25MA 15V 3GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2.8GHz
Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,320

15V

2.8GHz

2.5dB @ 800MHz

-

300mW

25 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG310W/XR,115

NXP

TRANS NPN 6V 10MA 14GHZ SOT343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 2GHz
Gain: 18dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: SC-82A, SOT-343

재고3,568

6V

14GHz

1dB @ 2GHz

18dB

60mW

60 @ 5mA, 3V

10mA

175°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

BFR505,215

NXP

TRANS NPN 15V 9GHZ SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,392

15V

9GHz

1.2dB ~ 2.1dB @ 900MHz

-

150mW

60 @ 5mA, 6V

18mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG590/X,215

NXP

TRANS RF NPN 15V 5GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고5,184

15V

5GHz

-

400mW

60 @ 70mA, 8V

200mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

1214-370M

Microsemi Corporation

TRANS RF BIPO 600W 25A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 8.7dB ~ 9dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

패키지: 55ST

재고3,424

75V

1.2GHz ~ 1.4GHz

-

8.7dB ~ 9dB

600W

10 @ 5A, 5V

25A

200°C (TJ)

Chassis Mount

55ST

1214-220M

Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

패키지: 55ST

재고6,864

70V

1.2GHz ~ 1.4GHz

-

7.4dB

700W

10 @ 1A, 5V

20A

200°C (TJ)

Chassis Mount

55ST

MS2207

Microsemi Corporation

TRANS RF BIPO 24A 65V M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

패키지: M216

재고6,352

65V

1.09GHz

-

8dB

880W

10 @ 5A, 5V

24A

250°C (TJ)

Chassis Mount

M216

MS1226

Microsemi Corporation

TRANS BIPO NPN M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 36V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 18dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고7,824

36V

30MHz

-

18dB

80W

10 @ 500mA, 5V

4.5A

200°C (TJ)

Chassis Mount

M113

2SC4915-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고4,400

30V

550MHz

2.3dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

BFP640H6327XTSA1

Infineon Technologies

TRANS RF NPN 4V 50MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고26,490

4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

12.5dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

2N918

Central Semiconductor Corp

TRANS RF NPN 15V 50MA TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60kHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고41,412

15V

600MHz

6dB @ 60kHz

-

200mW

20 @ 3mA, 1V

50mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

BFU710F,115

NXP

TRANSISTOR NPN SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 43GHz
Noise Figure (dB Typ @ f): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
Gain: -
Power - Max: 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 2V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

패키지: SOT-343F

재고28,980

2.8V

43GHz

0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz

-

136mW

200 @ 1mA, 2V

10mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

NTE2501

NTE Electronics, Inc

RF TRANS NPN 300V 70MHZ TO126

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 300V
Frequency - Transition: 70MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: -

Request a Quote

300V

70MHz

-

1.5W

100 @ 10mA, 10V

100mA

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

MRF1004MB

MACOM Technology Solutions

TRANS NPN 4W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 75mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 332A-03
Supplier Device Package: 332A-03, Style 1

패키지: -

Request a Quote

20V

-

11dB

4W

10 @ 75mA, 5V

250mA

-

Chassis Mount

332A-03

332A-03, Style 1

2SC5508-A

CEL

RF TRANS NPN 3.3V 25GHZ SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 19dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: -

패키지: -

Request a Quote

3.3V

25GHz

1.1dB @ 2GHz

19dB

115mW

50 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-343F

-

2N3799

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500µA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

60V

-

1.2W

300 @ 500µA, 5V

50mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

SD1309-01H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-